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Your search keyword '"Julien E, Rault"' showing total 4 results
Start Over Author "Julien E, Rault" Publisher arxiv
4 results on '"Julien E, Rault"'

1. High resolution depth profiling using near-total-reflection hard X-ray photoelectron spectroscopy

Author

Cheng-Tai Kuo, Julien E. Rault, Henrique P. Martins, Slavomír Nemšák, and G. Conti

Subjects
Total internal reflection, Range (particle radiation), Condensed Matter - Materials Science, Materials science, business.industry, Oxide, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Heterojunction, Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry.chemical_compound, Optics, X-ray photoelectron spectroscopy, chemistry, Reflection (physics), Penetration depth, business, Intensity (heat transfer)
Abstract

By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the experimental setup and specific data analysis process. We then review three different examples which show the broad application of this method. The emphasis is on its applications to correlated oxide heterostructures, especially quantitative depth analyses of compositions and electronic states. In a last part, we discussed the limitations of this technique, mostly in terms of range of samples which can be studied., Comment: 28 pages, 5 figures, review paper on NTR HAXPES

Published
2021
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2. Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

Author

Pascal Pochet, Yannick J. Dappe, Johann Coraux, Patrick Le Fèvre, Luc Moreau, J. C. Alvarez-Quiceno, François Bertran, César González, Muriel Sicot, Bertrand Kierren, Julien E. Rault, Thomas Pierron, Geoffroy Kremer, Yannick Fagot-Revurat, Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Fribourg Center for Nanomaterials, Département de Physique, Albert-Ludwigs-Universität Freiburg, Laboratory of Atomistic Simulation (LSIM), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Departamento de Fisica de Materiales, Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Systèmes hybrides de basse dimensionnalité (HYBRID), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Department of Physics [Fribourg], Université de Fribourg = University of Fribourg (UNIFR), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Departamento de Física de Materiales [Madrid], Universidad Autónoma de Madrid (UAM), Instituto de Magnetismo Aplicado, Groupe Modélisation et Théorie (GMT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), G. K. acknowledges financial support from the Swiss National Science Foundation (SNSF) Grant No. P00P2 170597. The DFT calculations were done using French supercomputers (GENCI, # 6194) and the Predictive Simulation Center facility that gathers in Grenoble SPINTEC, L Sim and Leti. We thanks Professor N. Mousseau for useful discussions. C. G. acknowledges finantial support from the Community of Madrid through the project NANOMAGCOST CM-S2018/NMT-4321., and ANR-14-OHRI-0004,2DTransformers,Matériaux bidimensionnels à changement de phase(2014)

Subjects
bilayer, Materials science, Band gap, FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, Molecular physics, law.invention, law, 0103 physical sciences, Photoemission spectroscopy, General Materials Science, 010306 general physics, Electronic band structure, Silicon oxide, Condensed Matter - Materials Science, business.industry, Graphene, Mechanical Engineering, Bilayer, Wide-bandgap semiconductor, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Semiconductor, Mechanics of Materials, Density functional theory calculations, 2D silicon oxide film, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Density functional theory, 0210 nano-technology, business
Abstract

Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalize with the help of density functional theory (DFT) calculations. We discover dispersing bands related to electronic delocalization within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controlled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using DFT calculations.

Published
2020
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3. Tunable two-dimensional electron system at the (110) surface of SnO$_2$

Author

Emmanouil Frantzeskakis, Franck Fortuna, Shamashis Sengupta, P. Le Fèvre, J. Dai, Julien E. Rault, Hiroshi Kumigashira, Martina Müller, Ryu Yukawa, François Bertran, Maximilian Thees, K. Horiba, Andrés F. Santander-Syro, and Patrick Lömker

Subjects
Condensed Matter - Materials Science, Surface oxygen, Materials science, Condensed matter physics, Strongly Correlated Electrons (cond-mat.str-el), Oxide, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, Crystal structure, Conductivity, 021001 nanoscience & nanotechnology, Electron system, 01 natural sciences, Condensed Matter - Strongly Correlated Electrons, chemistry.chemical_compound, Charge-carrier density, chemistry, 0103 physical sciences, ddc:530, 010306 general physics, 0210 nano-technology, Conduction band
Abstract

Physical review / B 101(8), 085121 (1-10) (2020). doi:10.1103/PhysRevB.101.085121, We report the observation of a two-dimensional electron system (2DES) at the (110) surface of the transparent bulk insulator SnO$_2$ and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions—an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of n-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band., Published by Inst., Woodbury, NY

Published
2020
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4. The structure and evolution of semiconducting buffer graphene grown on SiC(0001)

Author

E. H. Conrad, Matthew Conrad, Paul F. Miceli, Alina Vlad, Yuki Utsumi, Alessandro Coati, Julien E. Rault, Yves Garreau, and Jean-Pascal Rueff

Subjects
010302 applied physics, Condensed Matter - Materials Science, Materials science, business.industry, Graphene, Bilayer, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Reflectivity, Monolayer graphene, Buffer (optical fiber), law.invention, Standing wave, law, Covalent bond, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business
Abstract

Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it. We show that no more than 26\% of the buffer carbon is covalently bonded to Si in the SiC interface. We also show that the top SiC bilayer is Si depleted and is the likely the cause of the incommensuration previously observed in this system. When a monolayer graphene layer forms above the buffer, the buffer layer becomes less corrugated with signs of a change in the bonding geometry with the SiC interface. At the same time, the entire SiC interface becomes more disordered, presumably due to entropy associated with the higher growth temperature., Comment: 12 pages, 9 figures

Published
2017
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