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Moiré trapped interlayer excitons (IXs) in heterobilayer transition metal dichalcogenides currently attract strong interest due to their potential for non-classical light generation, coherent spin-photon interfaces and exploring novel correlated phases of electrons. Here, we report lasing of moiré trapped IXs by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer in a high-Q ($>10^4$) nanophotonic cavity. We control the detuning between the IX line and the cavity mode with a magnetic field and measure the dipolar coupling strength to the cavity mode to be $78 \pm 4\ \mathrm{μeV}$, fully consistent with the 82 $\mathrm{μeV}$ predicted by theory. The emission from the cavity mode shows clear threshold-like behaviour. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviours are significant at resonance whilst weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré trapped IXs with macroscopic coherence extending over the lengthscale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using 2D materials.

We report on the spatial coherence of interlayer exciton ensembles as formed in MoSe$_2$/WSe$_2$ heterostructures and characterized by point-inversion Michelson-Morley interferometry. Below 10 K, the measured spatial coherence length of the interlayer excitons reaches values equivalent to the lateral expansion of the exciton ensembles. In this regime, the light emission of the excitons turns out to be homogeneously broadened in energy with a high temporal coherence. At higher temperatures, both the spatial coherence length and the temporal coherence time decrease, most likely because of thermal processes. The presented findings point towards a spatially extended, coherent many-body state of interlayer excitons at low temperature.

The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: $\mathrm{C_2C_B}$, $\mathrm{C_2C_N}$, and $\mathrm{V_NC_B}$. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy 170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.

Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS$_2$ monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass wavefunction is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way towards harnessing novel light-matter interaction regimes for applications in quantum photonics.

Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons have been elusive. We observe several criticalities in photogenerated exciton ensembles hosted in MoSe2-WSe2 heterostacks with respect to photoluminescence intensity, linewidth, and temporal coherence pointing towards the transition to a coherent quantum state. For this state, the occupation is 100 percent and the exciton diffusion length is increased. The phenomena survive above 10 kelvin, consistent with the predicted critical condensation temperature. Our study provides a first phase-diagram of many-body interlayer exciton states including Bose Einstein condensation., Comment: 26 pages, 16 figures

Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature., Comment: 13 pages, 4 figures

A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental studies as well as novel technological concepts. Valley selective optical excitation allows for optoelectronic applications based on the momentum of excitons. In addition to lattice imperfections and disorder, scattering by phonons is a significant mechanism for valley depolarization and decoherence in TMDs at elevated temperatures preventing high-temperature valley polarization required for realistic applications. Thus, a detailed knowledge about strength and nature of the interaction of excitons with phonons is vital. We directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical (LO) phonon in the dipolar medium and the exciton. We find that this so-called Fr��hlich exciton LO-phonon interaction is suppressed by doping. This suppression correlates with a distinct increase of the degree of valley polarization of up to 20 % even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications., 18 pages, 3 figures, SI

Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.

Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi2Te2Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with the accumulated spins being transported in the side facets of the platelets. Our findings demonstrate that spin effects in the facets of 3D topological insulators can be addressed and read-out in optoelectronic devices even at room temperatures.

To combine the advantages of ultrafast femtosecond optics with an on-chip communcation scheme, optical signals with a frequency of several hundreds of THz need to be down-converted to coherent electronic signals of GHz or less. So far, this has not been achieved because of the impedance mismatch within electronic circuits and their overall slow response-time. Here, we demonstrate that 14 fs optical pulses in the near-infrared (NIR) can drive electronic on-chip circuits with a bandwidth up to 10 THz. The corresponding electronic pulses propagate in microscopic striplines on a millimeter scale. We exploit femtosecond photoswitches based on tunneling barriers in nanoscale metal junctions to drive the pulses. The non-linear ultrafast response is based on a combination of plasmonically enhanced, multi-photon absorption and quantum tunneling, and gives rise to a field emission of ballistic electrons propagating across the nanoscale junctions. Our results pave the way towards femtosecond electronics integrated in waferscale quantum circuits.

We investigate the photocurrent properties of the topological insulator (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ on SrTiO$_3$-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and manipulated on macroscopic length scales, for instance across the gate channel of a spin-transistor. Here, we report on millimeter-scale edge channels with a conductance quantized at a single quantum 1 $\times$ $e^2/h$ at zero magnetic field. The quantum transport is found at the lateral edges of three-dimensional topological insulators made of bismuth chalcogenides. The data are explained by a lateral, one-dimensional quantum confinement of non-topological surface states with a strong Rashba spin-orbit coupling. This edge transport can be switched on and off by an electrostatic field-effect. Our results are fundamentally different from an edge transport in quantum spin Hall insulators and quantum anomalous Hall insula-tors.

Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen-terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surface energy band bending, no definitive experimental demonstration has been reported so far. Here, we prove the two-dimensional character of the surface conductivity by low temperature characterization of diamond in-plane gated field-effect transistors that enable the lateral confinement of the transistor's drain-source channel to nanometer dimensions. In these devices, we observe Coulomb blockade effects of multiple quantum islands varying in size with the gate voltage. The charging energy and thus the size of these zero-dimensional islands exhibits a gate voltage dependence which is the direct result of the two-dimensional character of the conductive channel formed at hydrogen-terminated diamond surfaces.

We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason., Comment: pdf-file includes both main article and supplementary information

Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pumping laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons., 4 pages, 2 figures

In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit.