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Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn4N thin films have drawn considerable interest due to exhibiting perpendicular magnetic anisotropy, high domain-wall mobility, and good thermal stability. In this study, we employed x-ray photoelectron spectroscopy (XPS) and polarized neutron reflectometry (PNR) measurements to investigate the interfaces of an epitaxially grown MgO/Mn4N/Pt trilayer deposited at 450 °C. XPS revealed the thickness of elemental mixing regions of near 5 nm at both interfaces. Using PNR, we found that these interfaces exhibit essentially zero net magnetization at room temperature. Despite the high-temperature deposition at 450 °C, the thickness of mixing regions is comparable to those observed in magnetic films deposited at room temperature. Micromagnetic simulations show that this interfacial mixing should not deter the robust formation of small skyrmions, consistent with a recent experiment. The results obtained are encouraging in terms of the potential of integrating thermally stable Mn4N into future spintronic devices.

Superconducting ($S$) thin film superlattices composed of Nb and a normal metal spacer ($N$) have been extensively utilized in Josephson junctions given their favorable surface roughness compared to Nb films of comparable thickness. In this work, we characterize the London penetration depth and Ginzburg-Landau coherence lengths of $S/N$ superlattices using polarized neutron reflectometry and electrical transport. Despite the normal metal spacer layers being only approximately 8% of the total superlattice thickness, we surprisingly find that the introduction of these thin $N$ spacers between $S$ layers leads to a dramatic increase in the measured London penetration depth compared to that of a single Nb film of comparable thickness. Using the measured values for the effective in- and out-of-plane coherence lengths, we quantify the induced anisotropy of the superlattice samples and compare to a single Nb film sample. From these results, we find that that the superlattices behave similarly to layered 2D superconductors., Comment: 9 pages, 3 figures main text and 7 pages, 5 figures supplemental materials

Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.

In this letter we report a direct observation of a magnetic proximity effect in an amorphous thin film exchange-spring magnet by the use of neutron reflectometry. The exchange-spring magnet is a trilayer consisting of two ferromagnetic layers with high $T_c$'s separated by a ferromagnetic layer, which is engineered to have a significantly lower $T_c$ than the embedding layers. This enables us to measure magnetization depth profiles at which the low $T_c$ material is in a ferromagnetic or paramagnetic state, while the embedding layers are ferromagnetic. A clear proximity effect is observed 7 K above the $T_c$ of the embedded layer, with a range extending 50 $\unicode{xC5}$., Comment: 5 pages, 3 figures

As electrical control of N\'eel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the N\'eel order. We demonstrate spin Seebeck microscopy as a sensitive, table-top method for imaging antiferromagnetic order in thin films, and apply this technique to study spin-torque switching in NiO/Pt and Pt/NiO/Pt heterostructures. We establish the interfacial antiferromagnetic spin Seebeck effect in NiO as a probe of surface N\'eel order, resolving antiferromagnetic spin domains within crystalline twin domains. By imaging before and after applying current-induced spin torque, we resolve spin domain rotation and domain wall motion, acting simultaneously. We correlate the changes in spin Seebeck images with electrical measurements of the average N\'eel orientation through the spin Hall magnetoresistance, confirming that we image antiferromagnetic order., Comment: 26 pages including supporting information

Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through proximity couplings. During the magnetization reversal in a field scan, two intermediate spin configurations stem from unsynchronized magnetic switchings of the top and the bottom AFM/TI interfaces. These magnetic configurations are shown to result in new topological phases with non-zero Chern numbers for each surface, introducing two counter-propagating chiral edge modes inside the exchange gap. This change in the number of transport channels, as the result of the topological transitions, induces antisymmetric magneto-resistance spikes during the magnetization reversal. With the high Neel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists in transport measurements up to a temperature of around 90 K, a factor of three over the Curie temperature in a typical magnetically doped TI thin film.

A vertically graded anisotropy profile has been proposed as an optimized balance of low coercivity and thermal stability for multilayers used in magnetic media. Deposition pressure is known to have a profound effect on the magnetic reversal properties of Co/Pd multilayers, making it an attractive control parameter for achieving an anisotropy gradient. We have used polarized neutron reflectometry to study the depth-dependent reversal behavior of "pressure-graded" Co/Pd, and observed pronounced gradients in the saturation magnetization and in the rate at which magnetization changes with field (the effective anisotropy). While the anisotropy gradient likely arises from a combination of factors intrinsic to deposition pressure, micromagnetic simulations indicate that the observed saturation magnetization gradient alone has a major effect on the resulting coercivity.

We demonstrate that delta-doping can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-doped carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers show that they cause a local enhancement of ferromagnetic (F) double-exchange with respect to AF superexchange, resulting in local canting of the AF spins. This leads to a highly modulated magnetization, as measured by polarized neutron reflectometry. The spatial modulation of the canting is related to the spreading of charge from the doped layer, and establishes a fundamental length scale for charge transfer, transformation of orbital occupancy and magnetic order in these manganites. Furthermore, we confirm the existence of the canted, AF state as was predicted by de Gennes [P.-G. de Gennes, Phys. Rev. 118, 141 (1960)], but had remained elusive.

Depth grading of magnetic anisotropy in perpendicular magnetic media has been predicted to reduce the field required to write data without sacrificing thermal stability. To study this prediction, we have produced Co/Pd multilayers with depth-dependent Co layer thickness. Polarized neutron reflectometry shows that the thickness grading results in a corresponding magnetic anisotropy gradient. Magnetometry reveals that the anisotropy gradient promotes domain nucleation upon magnetization reversal---a clear experimental demonstration of the effectiveness of graded anisotropy for reducing write field.

Magnetometry, x-ray, and neutron scattering have been used to study the structural and magnetic properties of a TbMnO3 thin film grown on a [001] SrTiO3 substrate by pulsed laser deposition. Although bulk TbMnO3 is a low temperature antiferromagnet, magnetometry measurements indicate the presence of low temperature ferromagnetism. Depth profiling by x-ray and polarized neutron reflectometry reveals a net sample magnetization that is commensurate with the film thickness, indicating that the observed ferromagnetism is not due to an altered surface phase (such as Mn3O4), or external impurities that might give rise to an artificial magnetic signal. Instead, these results show that the ferromagnetism is an intrinsic property of the TbMnO3 film., Comment: Accepted to Journal of Applied Physics