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We conducted a thorough experimental and numerical study of the micromagnetic properties of Permalloy (Ni$_{80}$Fe$_{20}$) microdisks exhibiting target domain structures at remanence. Vortex configurations are quite common in such microdisks and correspond to an in-plane flux closure configuration of cylindrical symmetry with an out-of-plane magnetized core. In contrast, target domain configuration are observed in thicker microdisks and are characterized by a vortex configuration of the in-plane component of the magnetization superposed to an out-of-plane component of magnetization which oscillates as a function of the distance to the microdisk center resulting in the formation of concentric domains. The ratio of the out-of-plane oscillatory component of the magnetization to the in-plane vortex one increases with the thickness of the microdisk. Hysteresis loops were measured under in-plane and out-of-plane field. The results at remanence and under magnetic field could be interpreted by micromagnetic simulations in which the microdisks were described as an assembly of partially coupled columns representing the granular nanostructure of the films from which the microdisks were patterned. Quite original magnetization processes take place in these microdisks exhibiting target domain remanent configuration. These include in particular entire flipping of the domain configuration and annihilation/creation of ring domains., Comment: 17 pages, 11 figures

The advantage of an ultra-fast frequency-tunability of spin-torque nano-oscillators (STNOs) that have large (> 100MHz) relaxation frequency of amplitude fluctuations is exploited to realize ultra-fast wide-band time-resolved spectral analysis at nanosecond time scale with the frequency resolution limited only by the 'bandwidth' theorem. The demonstration is performed with an STNO generating in the 9 GHz frequency range, and comprised of a perpendicular polarizer and a perpendicularly and uniformly magnetized 'free' layer. It is shown that such a uniform-state STNO-based spectrum analyzer can efficiently perform spectral analysis of frequency-agile signals with rapidly varying frequency components.

International audience; A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low damping material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter.

Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing., Comment: 6 pages, 9 figures

We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double barrier magnetic tunnel junctions., Comment: 4 pages, 3 figures

International audience; Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface.