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Interface modes have been widely explored in the field of electronics, optics, acoustics and nanophononics. One strategy to generate them is band inversion in one-dimensional superlattices. Most realizations of this type of topological states have so far been explored for a single kind of excitation. Despite its potential in the manipulation and engineering of interactions, platforms for the simultaneous topological confinement of multiple excitations remain an open challenge. GaAs/AlAs heterostructures exhibit enhanced optomechanical interactions due to the intrinsic colocalization of light and sound. In this work, we designed, fabricated, and experimentally studied a multilayered structure based on GaAs/AlAs. Due to the simultaneously inverted band structures for light and phonons, colocalized interface modes for both 1.34 eV photons and 18 GHz phonons appear. We experimentally validated the concept by optical reflectivity and coherent phonon generation and detection. Furthermore, we theoretically analyzed the performance of different topological designs presenting colocalized states in time-domain Brillouin scattering and deduce engineering rules. Potential future applications include the engineering of robust optomechanical resonators, compatible with the incorporation of active media such as quantum wells and quantum dots., Comment: 11 pages, 5 figures, 34 references

In this work we present a tight-binding model that allows to describe with a minimal amount of parameters the band structure of exciton-polariton lattices. This model based on $s$ and $p$ non-orthogonal photonic orbitals faithfully reproduces experimental results reported for polariton graphene ribbons. We analyze in particular the influence of the non-orthogonality, the inter-orbitals interaction and the photonic spin-orbit coupling on the polarization and dispersion of bulk bands and edge states., Comment: 14 pages, 8 figures

Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer-scale resolution. Here, we use low- and room-temperature cathodoluminescence (CL) measurements to analyze $p$-type and $n$-type $\mathrm{Ga}\mathrm{As}$ thin films over a wide range of carrier densities ($2\ifmmode\times\else\texttimes\fi{}{10}^{17}$ to $1\ifmmode\times\else\texttimes\fi{}{10}^{19}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$). The spectral shift and broadening of CL spectra induced by shallow dopant states and band filling are the signature of doping. We fit the whole spectral lineshapes with the generalized Planck law and refined absorption models to extract the bandgap narrowing and the band tail for both doping types, and the electron Fermi level for $n$ doping. This work provides a rigorous method for the quantitative assessment of $p$-type and $n$-type carrier densities using CL. Taking advantage of the high spatial resolution of CL, it can be used to map the doping in $\mathrm{Ga}\mathrm{As}$ nanostructures, and it could be extended to other semiconductor materials.

Light's orbital angular momentum (OAM) is an unbounded degree of freedom emerging in helical beams that appears very advantageous technologically. Using a chiral microlaser, i.e. an integrated device that allows generating an emission carrying a net OAM, we demonstrate a regime of bistability involving two modes presenting distinct OAM (L = 0 and L = 2). Furthermore, thanks to an engineered spin-orbit coupling of light in the device, these modes also exhibit distinct polarization patterns, i.e. cirular and azimuthal polarizations. Using a dynamical model of rate euqations, we show that this bistability arises from polarization-dependent saturation of the gain medium. Such a bistable regime appears very promising for implementing ultrafast optical switches based on the OAM of light. As well, it paves the way to the exploration of dynamical processes involving phase and polarization vortices.

We develop a method of non-perturbative optical control over adiabatic remagnetisation of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow the predictions of the spin-temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalisation. These findings open a way to deep cooling of nuclear spins in semiconductor structures, with a prospect of realisation of nuclear spin-ordered statesfor high fidelity spin-photon interfaces., Comment: 7 pages, 4 figures

Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic field. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to drive nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to micro and nanostructures., Comment: 11 pages, 4 figures

We experimentally explore the dynamic optical hysteresis of a semiconductor microcavity as a function of the sweep time. The hysteresis area exhibits a double power law decay due to the shot noise of the driving laser, which triggers switching between metastable states. Upon increasing the average photon number and approaching the thermodynamic limit, the double power law evolves into a single power law. This algebraic behavior characterizes a dissipative phase transition. Our findings are in good agreement with theoretical predictions, and the present experimental approach is promising for the exploration of critical phenomena in photonic lattices., Comment: 9 pages including supplemental information

The desiderata for an ideal photon source are high brightness, high single-photon purity, and high indistinguishability. Defining brightness at the first collection lens, these properties have been simultaneously demonstrated with solid-state sources, however absolute source efficiencies remain close to the 1% level, and indistinguishability only demonstrated for photons emitted consecutively on the few nanosecond scale. Here we employ deterministic quantum dot-micropillar devices to demonstrate solid-state single-photon sources with scalable performance. In one device, an absolute brightness at the output of a single-mode fibre of 14% and purities of 97.1-99.0% are demonstrated. When non-resontantly excited, it emits a long stream of photons that exhibit indistinguishability up to 70%---above the classical limit of 50%---even after 33 consecutively emitted photons, a 400 ns separation between them. Resonant excitation in other devices results in near-optimal indistinguishability values: 96% at short timescales, remaining at 88% in timescales as large as 463 ns, after 39 emitted photons. The performance attained by our devices brings solid-state sources into a regime suitable for scalable implementations., Comment: 11 pages, 8 figures

We investigated optical spin orientation and dynamic nuclear polarization (DNP) in individual self-assembled InGaAs/GaAs quantum dots (QDs) doped by a single Mn atom, a magnetic impurity providing a neutral acceptor A$^0$ with an effective spin $J=1$. We find that the spin of an electron photo-created in such a quantum dot can be efficiently oriented by a quasi-resonant circularly-polarized excitation. For the electron spin levels which are made quasi-degenerate by a magnetic field compensating the exchange interaction $\Delta_e$ with A$^0$, there is however a full depolarization due the anisotropic part of the exchange. Still, in most studied QDs, the spin polarized photo-electrons give rise to a pronounced DNP which grows with a longitudinal magnetic field until a critical field where it abruptly vanishes. For some QDs, several replica of such DNP sequence are observed at different magnetic fields. This striking behavior is qualitatively discussed as a consequence of different exchange interactions experienced by the electron, driving the DNP rate via the energy cost of electron-nucleus spin flip-flops., Comment: 10 pages, 7 figures

Bosons hopping across sites and interacting on-site are the essence of the Bose-Hubbard model (BHM). Inspired by the success of BHM simulators with atoms in optical lattices, proposals for implementing the BHM with photons in coupled nonlinear cavities have emerged. Two coupled semiconductor microcavities constitute a model system where the hopping, interaction, and decay of exciton polaritons --- mixed light-matter quasiparticles --- can be engineered in combination with site-selective coherent driving to implement the driven-dissipative two-site optical BHM. Here we explore the interplay of interference and nonlinearity in this system, in a regime where three distinct density profiles can be observed under identical driving conditions. We demonstrate how the phase acquired by polaritons hopping between cavities can be controlled through effective polariton-polariton interactions. Our results open new perspectives for synthesizing density-dependent gauge fields for polaritons in two-dimensional multicavity systems., Comment: 10 pages including supplemental information, 4 main figures, 4 supplemental figures

Microcavity polaritons in the lasing regime undergo a spontaneous symmetry breaking transition resulting in coherent emission with a well defined polarization. The order parameter is thus a vector describing both the laser global phase and polarization. Using an ultrafast single-shot detection technique we show that polariton lasing in GaAs-based microcavities presents a high degree of second order coherence ($g^{(2)}(\tau=0) \approx 1$) above threshold, and that the initial polarization is stochastic, taking any possible direction in the Poincar\'e sphere (linear, elliptical or circular). Once the polarization direction is established, subsequent oscillations of the emission probability witness the presence of an intrinsic polarization splitting. Our results show the negligible role of polariton interactions in the total emission statistics and in the establishment of the initial polarization., Comment: 9 pages, 6 figures

We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other accessible and optically dark states become macroscopically occupied so that the overall exciton population in the trap is conserved. These combined behaviours constitute the spectroscopic signature for the mostly dark Bose-Einstein condensation of excitons, which in our experiments is restricted to a dilute regime within a narrow range of densities, below a critical temperature of about 1K., Comment: 7 pages and 5 figures

We report on optomechanical GaAs disk resonators with ultrahigh quality factor - frequency product Qf. Disks standing on a simple pedestal exhibit GHz breathing modes attaining a Qf of 10^13 measured under vacuum at cryogenic temperature. Clamping losses are found to be the dominant source of dissipation in this configuration. A new type of disk resonator integrating a shield within the pedestal is then proposed and its working principles and performances investigated by numerical simulations. For dimensions compatible with fabrication constraints, the clamping-loss-limited Q reaches 10^7-10^9 corresponding to Qf of 10^16-10^18. This shielded pedestal approach applies to any heterostructure presenting an acoustic mismatch., Comment: 4 pages, 1 table, 3 figures

A textbook example of quantum mechanical effects is the coupling of two states through a tunnel barrier. In the case of macroscopic quantum states subject to interactions, the tunnel coupling gives rise to Josephson phenomena including Rabi oscillations, the a.c. and d.c. effects, or macroscopic self-trapping depending on whether tunnelling or interactions dominate. Non-linear Josephson physics, observed in superfluid helium and atomic condensates, has remained inaccessible in photonic systems due to the required effective photon-photon interactions. We report on the observation of non-linear Josephson oscillations of two coupled polariton condensates confined in a photonic molecule etched in a semiconductor microcavity. By varying both the distance between the micropillars forming the molecule and the condensate density in each micropillar, we control the ratio of coupling to interaction energy. At low densities we observe coherent oscillations of particles tunnelling between the two micropillars. At high densities, interactions quench the transfer of particles inducing the macroscopic self-trapping of the condensate in one of the micropillars. The finite lifetime of polaritons results in a dynamical transition from self-trapping to oscillations with pi phase. Our results open the way to the experimental study of highly non-linear regimes in photonic systems, such as chaos or symmetry-breaking bifurcations.

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures., Comment: Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev. B

Quantum dots are a promising host for spin-based qubits. Whereas nuclear-field fluctuations adversely affect electron-spin coherence, the smaller hyperfine interaction between holes and nuclei makes holes a promising alternative. A sensitive measurement of the hyperfine constant of the holes in different quantum-dot material systems now demonstrates how this interaction can be tuned and perhaps further reduced. It has been proposed that valence-band holes can form robust spin qubits1,2,3,4 owing to their weaker hyperfine coupling compared with electrons5,6. However, it was demonstrated recently7,8,9,10,11 that the hole hyperfine interaction is not negligible, although a consistent picture of the mechanism controlling its magnitude is still lacking. Here we address this problem by measuring the hole hyperfine constant independently for each chemical element in InGaAs/GaAs, InP/GaInP and GaAs/AlGaAs quantum dots. Contrary to existing models10,11 we find that the hole hyperfine constant has opposite signs for cations and anions and ranges from −15% to +15% relative to that for electrons. We attribute such changes to the competing positive contributions of p-symmetry atomic orbitals and the negative contributions of d-orbitals. These findings yield information on the orbital composition of the valence band12 and enable a fundamentally new approach for verification of computed Bloch wavefunctions in semiconductor nanostructures13. Furthermore, we show that the contribution of cationic d-orbitals leads to a new mechanism of hole spin decoherence.

We report on an integrated GaAs disk/waveguide system. A millimeter-long waveguide is suspended and tapered on the chip over a length of 25 {\mu}m to evanescently couple to high Q optical whispering gallery modes of a GaAs disk. The critical coupling regime is obtained both by varying the disk/guide gap distance and the width of the suspended nanoscale taper. The experimental results are in good agreement with predictions from the coupled mode theory., Comment: 14 pages, 4 figures

Optomechanical coupling between a mechanical oscillator and light trapped in a cavity increases when the coupling takes place in a reduced volume. Here we demonstrate a GaAs semiconductor optomechanical disk system where both optical and mechanical energy can be confined in a sub-micron scale interaction volume. We observe giant optomechanical coupling rate up to 100 GHz/nm involving picogram mass mechanical modes with frequency between 100 MHz and 1 GHz. The mechanical modes are singled-out measuring their dispersion as a function of disk geometry. Their Brownian motion is optically resolved with a sensitivity of 10^(-17)m/sqrt(Hz) at room temperature and pressure, approaching the quantum limit imprecision., Comment: 7 pages, 3 figures

We report optically detected nuclear magnetic resonance (ODNMR) measurements on small ensembles of nuclear spins in single GaAs quantum dots. Using ODNMR we make direct measurements of the inhomogeneous Knight field from a photo-excited electron which acts on the nuclei in the dot. The resulting shifts of the NMR peak can be optically controlled by varying the electron occupancy and its spin orientation, and lead to strongly asymmetric lineshapes at high optical excitation. The all-optical control of the NMR lineshape will enable position-selective control of small groups of nuclear spins in a dot. Our calculations also show that the asymmetric NMR peak lineshapes can provide information on the volume of the electron wave-function, and may be used for measurements of non-uniform distributions of atoms in nano-structures., Comment: submitted to PRL

We report on the micro-photoluminescence spectroscopy of InAs/GaAs quantum dots (QD) doped by a single Mn atom in a magnetic field either longitudinal or perpendicular to the optical axis. In both cases the spectral features of positive trion (X+) are found to split into strongly circularly polarized components, an effect very surprising in a perpendicular magnetic field. The field-induced splitting is ascribed to the transverse Zeeman splitting of the neutral acceptor complex A0 issued by the Mn impurity, whereas the circular optical selection rules result from the p-d exchange which acts as a very strong longitudinal magnetic field inhibiting the spin mixing by the transverse field of the QD heavy-hole ground state. A theoretical model of the spin interactions which includes (i) the local strain anisotropy experienced by the acceptor level and (ii) the anisotropic exchange due to the out-of-center Mn position provides a very good agreement with our observations., Comment: 6 pages, 4 figures

We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on individual InGaAs quantum dots we control the magnitude and direction of an effective internal magnetic field created via optical pumping of nuclear spins. The adjustable nuclear magnetic field allows us to tune the linear and circular polarization degree of the neutral exciton emission. The quantum dot can thus act as a tunable light polarization converter., Comment: 5 pages, 3 figures

International audience; A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques.

We investigate in micro-photoluminescence experiments the dynamical nuclear polarization in individual InGaAs quantum dots. Experiments carried out in an applied magnetic field of 2T show that the nuclear polarization achieved through the optical pumping of electron spins is increasing with the sample temperature between 2K and 55K, reaching a maximum of about 50%. Analysing the dependence of the Overhauser shift on the spin polarization of the optically injected electron as a function of temperature enables us to identify the main reasons for this increase., Comment: 5 pages, 3 figures

The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full (Ga,Mn)As valence band states contribution, whereas a forward bias only probes part of the density of states and reveals opposite contributions from two subbands., Comment: 11 pages, 3 figures