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We have performed an ab initio investigation of the electronic properties of the graphene sheet adsorbed by Ru adatoms (Ru/graphene). For a particular set of triangular arrays of Ru adatoms, we find the formation of four (spin-polarized) Dirac cones attributed to a suitable overlap between two hexagonal lattices: one composed by the C sites of the graphene sheet, and the other formed by the surface potential induced by the Ru adatoms. Upon the presence of spin-orbit coupling (SOC) nontrivial band gaps take place at the Dirac cones promoting several topological phases. Depending on the Ru concentration, the system can be topologically characterized among the phases i) Quantum Spin Hall (QSH), ii) Quantum Anomalous Hall (QAH), iii) metal iv) or trivial insulator. For each concentration, the topological phase is characterized by the ab-initio calculation of the Chern number., Comment: 8 pages, 6 figures

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of $[000\bar{1}]$ $SiC$ mimics i)the energy bands around the Fermi level and ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a $SiC$ surface loses the graphene-like properties, which are restored solely over the trenches, providing in this way a confined strip region., Comment: 4 pages, 4 figures

We investigate how the insertion of an oxygen atom in an atomically thin gold nanowire can affect its rupture. We find, using ab initio total energy density functional theory calculations, that O atoms when inserted in gold nanowires form not only stable but also very strong bonds, in such a way that they can extract atoms from a stable tip, serving in this way as a clamp that could be used to pull a string of gold atoms., Comment: 4 pages; 4 figures

We study using first-principles total-energy calculations, diffusion-reaction processes involved in the thermal nitridation of SiO2. We consider NO, NH, N2 and atomic N in different charge states as the nitriding species in alpha-quartz. Our results show that none of neutral species react with the SiO2 network remaining at interstitial sites. Therefore, they are likely to diffuse through the oxide, incorporating nitrogen at near-interface (Si/SiO2) regions. Whereas, charged species are trapped by the network, nitriding bulk SiO2. For the diffusing species, we find that NH and atomic N show increasing diffusivities with temperatures, whereas for NO and N2 they are relatively constant. This result agree well with the finding of higher N concentration at the Si/SiO2 interface obtained by thermal processing of SiO2 in NH3 as compared with those obtained in N2O. Finally, we discuss spin-dependent incorporation reaction mechanisms of NH and atomic N with the SiO2 network., Comment: Revtex, 7 pages, 5 figures, submitted to Phys. Rev. B