62 results on '"Vandervorst, W."'
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2. Electron beam induced etching of silicon with SF6
3. Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
4. Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
5. Probing doping conformality in fin shaped field effect transistor structures using resistors
6. Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
7. Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions
8. P implantation doping of Ge: Diffusion, activation, and recrystallization
9. Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation
10. Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge
11. Active dopant characterization methodology for germanium
12. Towards nondestructive carrier depth profiling
13. Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
14. Surface and grain boundary scattering studied in beveled polycrystalline thin copper films
15. Metal film characterization with qualified spreading resistance
16. Assessing the performance of two-dimensional dopant profiling techniques
17. High-resolution scanning spreading resistance microscopy of surrounding-gate transistors
18. Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
19. Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy
20. Carrier illumination for characterization of ultrashallow doping profiles
21. Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth
22. Effect of N2 annealing on AlZrO oxide
23. Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy
24. Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques
25. Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions
26. Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling
27. Impact of probe penetration on the electrical characterization of sub-50 nm profiles
28. New aspects of nanopotentiometry for complementary metal–oxide–semiconductor transistors
29. Comparison of two-dimensional carrier profiles in metal–oxide– semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling
30. Cluster formation during annealing of ultra-low-energy boron-implanted silicon
31. Qualification of spreading resistance probe operations. I
32. Evaluating probes for “electrical” atomic force microscopy
33. Need to incorporate the real micro-contact distribution in spreading resistance correction schemes
34. Qualification of spreading resistance probe operations. II
35. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
36. Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy
37. X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry study of the role of Ti and TiN caps on the cobalt/SiO2 interface
38. Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy
39. Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas: Afterglow of a NF3 plasma
40. Low weight spreading resistance profiling of ultrashallow dopant profiles
41. Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas
42. Effects of oxygen flooding on sputtering and ionization processes during ion bombardment
43. One- and two-dimensional carrier profiling in semiconductors by nanospreading resistance profiling
44. Importance of determining the polysilicon dopant profile during process development
45. Influence of the substrate doping level on spreading resistance profiling
46. Recent insights into the physical modeling of the spreading resistance point contact
47. Sheet resistance corrections for spreading resistance ultrashallow profiling
48. Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips
49. Influence of the composition of the altered layer on the ripple formation
50. Modifications in the Si valence band after ion-beam-induced oxidation
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