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Your search keyword '"Fushinobu, Kazuyoshi"' showing total 11 results
Start Over Author "Fushinobu, Kazuyoshi" Publisher american society of mechanical engineers
11 results on '"Fushinobu, Kazuyoshi"'

5. An experimental and numerical study of a liquid mixing device for microsystems

Author

Fushinobu, Kazuyoshi and Nakata, Masashi

Subjects
Circuit design -- Research, Electronic packaging -- Research, Circuit designer, Integrated circuit design, Electronics
Abstract

A microfluidic mixing device for microsystems with electroosmotic flow (EOF)-driven liquid pumping is proposed and examined experimentally and numerically. Microchannels with Si[O.sub.2] or [Al.sub.2][O.sub.3] wall are fabricated by using surface micromachining technique, and the EOF velocity for each microchannel is measured. A sample device where part of the Si[O.sub.2] wall is covered with a patterned [Al.sub.2][O.sub.3] thin film is fabricated to demonstrate the proposed flow pattern change. Results of numerical calculations suggest mixing enhancement effect. [DOI: 10.1115/1.1869511]

Published
2005

9. Numerical Calculation of the Pulse Compression of Ultrashort Pulse Laser Light by Means of the Thermoreflectance of SiC Substrate

Author

Doan, Doku, Doan, Doku hon, and FUSHINOBU, KAZUYOSHI

Subjects
Number density, Materials science, business.industry, Analytical chemistry, Substrate (electronics), Laser, law.invention, Pulse (physics), Multiphoton intrapulse interference phase scan, Pulse compression, law, Optoelectronics, Electron temperature, business, Ultrashort pulse laser
Abstract

A numerical model of the thermoreflectance of doped SiC substrate and typical numerical results are presented. The model considers the temporal response of the electron temperature and the number density of the electronic carriers. Calculated results show steep increase of electron temperature and the resulting increase of reflectivity. As a result, the reflected laser pulse by the substrate is compressed in time domain by means of the temporal response of the thermoreflectance characteristics of SiC substrate. Thermal analysis of the electrons reveals the interesting feature of the thermoreflectance response as a function of pulse intensity, pulse width, or doping concentration. The technique can be used for the compression of ultrashort pulse laser light.Copyright © 2013 by ASME

Published
2013
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10. Fundamental Research on Via Processing by Using Short Pulse Laser in SiC

Author

Iwatani, Naoki, Doan, Doku, Doan, Doku hon, and FUSHINOBU, KAZUYOSHI

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Laser, Fluence, law.invention, Pulsed laser deposition, chemistry.chemical_compound, chemistry, law, Etching (microfabrication), Silicon carbide, Electronic engineering, Optoelectronics, Wafer, business, Laser drilling
Abstract

Laser drilling of silicon carbide (SiC) wafer in air (dry ablation) and underwater by using ns pulsed infrared (1064 nm) Nd: YAG laser is investigated. In order to suggest optimal parameters of via processing in SiC wafer, the effects of pulse number, laser fluence, water film thickness, and focus position are evaluated. As compared with dry ablation vias, decreasing etching rate, increasing via diameter, and generation of cracks in high-energy regime are observed in liquid-assisted processing. However, it is found that it can create vias without debris, HAZ, cracks. Also, optimal parameter set for infrared pulse laser processing under water is found to be the laser fluence of less than 10 J/cm2 and water thickness of 1mm.

Published
2013
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