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Nanolithography used in conjunction with atomic force microscopy (AFM) has attracted considerable attention as a technique for fabricating nanoscale structures. To obtain nanostructures and devices, AFM nanoscratching was performed on a photoresist and on NiFe at various values of the applied force, scan speed, and number of scan cycles. The scratching process was carried out using a diamond-coated tip on NiFe and a Si tip on the photoresist. By conducting scratching processes on NiFe and on the photoresist, we investigated the dependence of the size of the scratched part on the scratching parameters. These results show that the width and depth of the scratched part increase as the applied force and number of scan cycles increase, but not as the scan speed increases. This means that it is possible to control the size of the scratched parts by adjusting the applied force and number of scan cycles. AFM nanoscratching was then used to directly fabricate a nanoconstricted area with a width of 139 nm and a cross-sectional area of less than 300 nm2 was fabricated.