1. Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics
- Author
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Keivan Esfarjani, Gang Chen, Asegun Henry, Yann Chalopin, Sebastian Volz, Laboratoire d'Énergétique Moléculaire et Macroscopique, Combustion (EM2C), and CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université Paris Saclay (COmUE)
- Subjects
Materials science ,Condensed matter physics ,Phonon ,Superlattice ,Conductance ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Thermal conduction ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Molecular dynamics ,Thermal conductivity ,0103 physical sciences ,Thermoelectric effect ,Thermal ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph] ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,010306 general physics ,0210 nano-technology - Abstract
International audience; We provide a derivation allowing the calculation of thermal conductance at interfaces by equilibrium molecular dynamics simulations and illustrate our approach by studying thermal conduction mechanisms in Si/Ge superlattices. Thermal conductance calculations of superlattices with period thicknesses ranging from 0.5 to 60 nm are presented as well as the temperature dependence. Results have been compared to complementary Green-Kubo thermal conductivity calculations demonstrating that thermal conductivity of perfect superlattices can be directly deduced from interfacial conductance in the investigated period range. This confirms the predominant role of interfaces in materials with large phonon mean free paths.
- Published
- 2012
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