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Rare-earth-transition-metal (RETM) ferrimagnets have received great attention for their small magnetic moments and fast dynamics in the development of next-generation spintronic devices. Here, we study spin Hall magnetoresistance (SMR) in the RETM ferrimagnet and heavy-metal bilayers of ${\mathrm{Co}}_{1\text{\ensuremath{-}}x}{\mathrm{Tb}}_{x}/\mathrm{Pt}$. Anomalous temperature dependence of the SMR is observed, where the SMR changes nonmonotonically and has a valley next to the magnetization compensation temperature. Additionally, we find that the SMR varies significantly for different chemical compositions of ${\mathrm{Co}}_{1\text{\ensuremath{-}}x}{\mathrm{Tb}}_{x}$ alloys. These anomalous behaviors are interpreted as the dramatically altered spin polarization of the ${\mathrm{Co}}_{1\text{\ensuremath{-}}x}{\mathrm{Tb}}_{x}$ layer near the compensation point. By deducing spin polarization from the abnormal temperature dependence of SMR, we provide a convenient way to access spin polarization of the RETM ferrimagnets. These experimental results show implications for tunable spin-current sources of RETM ferrimagnets.

The topological material of $\mathrm{C}{\mathrm{o}}_{2}\mathrm{MnGa}$ with potentially high spin polarization has attracted more and more attention, in the fields of fundamental science and spintronic applications. Here we report the electrical- and magnetotransport behaviors in epitaxial $\mathrm{C}{\mathrm{o}}_{2}\mathrm{MnGa}$ thin films. An angle-independent negative linear magnetoresistance and a negative anisotropy magnetoresistance are observed in the whole temperature range from 3 to 300 K, indicating the existence of weak spin disorder and a high spin polarization. Intriguingly, with decreasing temperature an anomalous resistivity upturn that exhibits $\ensuremath{-}{T}^{1/2}$ dependence is observed, and this phenomenon is robust under magnetic fields. Further analysis demonstrates that the three-dimensional enhanced electron-electron interaction effect is responsible for these phenomena rather than the orbital two-channel Kondo effect or other quantum interference effects, which provides deeper insight into the transport behavior of the $\mathrm{C}{\mathrm{o}}_{2}\mathrm{MnGa}$ materials.