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The relation between projective measurements and generalized quantum measurements is a fundamental problem in quantum physics, and clarifying this issue is also important to quantum technologies. While it has been intuitively known that projective measurements can be constructed from sequential generalized or weak measurements, there is still lack of a proof of this hypothesis in general cases. Here we prove it from the perspective of quantum channels. We show that projective measurements naturally arise from sequential generalized measurements in the asymptotic limit. Specifically, a selective projective measurement arises from a set of typical sequences of selective generalized measurements. We provide an explicit scheme to construct projective measurements of a quantum system with sequential generalized measurements. Remarkably, a single ancilla qubit is sufficient to mediate sequential generalized measurements for constructing arbitrary projective measurements of a generic system., Comment: 8 pages, 2 figures (+6 pages supplement)

Ultrafast photoexcitation can induce a nonequilibrium dynamic with electron-lattice interaction, offering an effective way to study photoinduced phase transitions (PIPTs) in solids. The issue that atomic displacements after photoexcitation belong to coherent change or disordered process, has become a controversy in the PIPT community. Using real-time time-dependent density functional theory (rt-TDDFT) simulations, we obtain both the coherent and the disordered PIPTs (dimer dissociation) in IrTe2 with the different electronic occupations. More importantly, we found that in the disordered phase transition, there exists a local correlation between different dimers regarding their dissociation status. One can define vertical groups across the layers. The dimers in the same group will dissociate in a correlated fashion: they either all dissociate, or all not dissociate. On the other hand, the dimers in neighboring groups will have an anti-correlation: if the dimers in one group dissociate, the dimers in the neighboring group tend not to be dissociated, and vice versus., Comment: 13 pages,5 figures

Path-independent (PI) quantum control has recently been proposed to integrate quantum error correction and quantum control [Phys. Rev. Lett. 125, 110503 (2020)], achieving fault-tolerant quantum gates against ancilla errors. Here we reveal the underlying algebraic structure of PI quantum control. The PI Hamiltonians and propagators turn out to lie in an algebra isomorphic to the ordinary matrix algebra, which we call the PI matrix algebra. The PI matrix algebra, defined on the Hilbert space of a composite system (including an ancilla system and a central system), is isomorphic to the matrix algebra defined on the Hilbert space of the ancilla system. By extending the PI matrix algebra to the Hilbert-Schmidt space of the composite system, we provide an exact and unifying condition for PI quantum control against ancilla noise., Comment: 9 pages, 2 figures

Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete $\mathrm{Si}/\mathrm{Si}{\mathrm{O}}_{2}$ interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a ``Si-H\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}H-O'' complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}H-O complex will be the center for defect creation and device degradation. We also explain why such a center might be relatively easy to form during the hydrogen annealing process.

Author(s): Liu, WH; Luo, JW; Li, SS; Wang, LW | Abstract: Photoinduced phase transitions can have complex and intriguing behaviors more than material ground-state dynamics. Understanding the underlying mechanism can help us to design new ways to manipulate the materials. A variety of mechanisms has been proposed to explain the photoinduced phase transitions of IrTe2, but a consensus has yet to be reached. Here, we study the photo-induced phase transitions of IrTe2 by performing the real-time time-dependent density functional theory (rt-TDDFT) simulations in combination with the occupation constrained DFT method. We reveal that the microscopic driving force for the photo-induced phase transitions arises from the tendency to lower the energy levels occupied by the excited carriers, through the increase or decrease of the associated atomic pair distances, depending on whether the newly occupied states are antibonding or bonding states, respectively. The geometric constraints between different bonds represented by the Poisson ratio can bring together different tendencies from different atomic pairs, thus forming a complex intriguing dynamic picture depending on the intensity of the excitation. We also find that phonons don't play a primary role, but can assist the phase transition. These findings imply that one can control the structural phase transitions by selectively exciting photocarriers into designated atomic states using appropriate photon sources.

Degrees of freedom like charge, spin, and valley in condensed matter have drawn much attention in the past decades. Recently, several kinds of nodal line semimetals have been discovered for which the conduction and valence bands cross along one-dimensional lines, usually forming loops. These distinct loops, similar to valleys, can be used as a possible carrier of information. Here we investigate the loop polarization during quantum transports, i.e., barrier tunneling as well as disorder scattering, in Hopf semimetals with two disconnected loops. We find that in both cases, the loop polarization is mostly dominated by the performance of normal incidence, due to the mirror symmetry of two loop planes and the finite size effect along one direction. After scattered by nonmagnetic disordered potentials, the opposite polarizations can intrinsically reveal the topological structure of two loops, linked or unlinked. The effects from smooth barriers and disorders are also investigated. We find that a long range smooth barrier leads to an even clearer and purer picture of scattering and loop polarization, due to the suppression of large momentum transfer. These effects can be used as a controllable loop filter and detector.

Author(s): Liu, YY; Liu, F; Wang, R; Luo, JW; Jiang, X; Huang, R; Li, SS; Wang, LW | Abstract: The complexity of charge trapping in semiconductor devices, such as high-κ MOSFETs, is increasing as the devices themselves become more complicated. To facilitate research into such charge-trapping issues, here we propose an optimized simulation framework that is composed of density-functional theory (DFT) for electronic structure calculation and Marcus theory for the calculation of charge-trapping rates. The DFT simulations are either carried out or corrected by using the Heyd-Scuseria-Ernzerhof hybrid functional. Using this framework, the hole-trapping characteristics along multiple paths in Si/SiO2/HfO2 stacks are investigated, and the relative importance of each path is revealed by calculating its exact hole-trapping rate. Besides the study on crystalline stacks, we also create an amorphous stack, which is more realistic compared with experiments and real devices, to reveal more active trapping centers and to study the statistical feature of charge trapping induced by structural disorder. In addition, to seek effective measures for relieving these charge-trapping problems, the effects of hydrogen and fluorine passivations are discussed, and physical insights for improving the performance of high-κ MOSFETs are provided.

Low-energy impurity diffusion in a host material is often regarded as an adiabatic process, characterized by its adiabatic potential energy barrier. Here we show that the diffusion process in semiconductors can involve nonadiabatic electron excitations, rending it to be a more complicated process. Impurity diffusion in a device at working temperature can pump one electron up from localized impurity state into the host conduction band and causes the impurity to be a dynamic donor since it temporarily loses its electron to the host. This nonadiabatic process, against a common belief, fundamentally change the diffusion behavior, including its barrier height and diffusion path. Although we mainly demonstrate this process with Au metal impurity in bulk Si through time-dependent density functional theory simulations, we believe this could be a rather common phenomenon as it is shown that the similar phenomena also exist in Zn, Cd impurities diffusion in bulk Si, and Ti diffusion in $\mathrm{Ti}{\mathrm{O}}_{2}$. We believe this study can open up a new direction of inquiry for such diffusion behavior in semiconductor.

Author(s): Liu, YY; Zheng, F; Jiang, X; Luo, JW; Li, SS; Wang, LW | Abstract: Accurate microscopic description of the charge-trapping process from semiconductor to defects in the dielectric-oxide layer is of paramount importance for understanding many microelectronic devices such as complementary metal-oxide-semiconductor (CMOS) transistors, as well as electrochemical reactions. Unfortunately, most current microscopic descriptions of such processes are based on empirical models with parameters fitted to experimental device performance results or simplified approximations like the Wentzel-Kramers-Brillouin (WKB) method. Some critical questions are still unanswered, including: What controls the charge-hopping rate, the coupling strength between the defect level to semiconductor level, or the energy difference? How does the hopping rate decay with defect-semiconductor distance? What is the fluctuation of the defect level, especially in amorphous dielectrics? Many of these questions can be answered by ab initio calculations. However, to date, there are few ab initio studies for this problem mainly due to technical challenges from atomic-structure construction to large-system calculations. Here, using the latest advances in calculation methods and codes, we study the carrier-trapping problem using density-functional theory (DFT) based on the Heyd-Scuseria-Ernzerhof (HSE) exchange correlation functional. The valence bond random-switching method is used to construct the crystalline-Si-amorphous-SiO2 (c-Si/a-SiO2) interfacial atomic structure, and the HSE yields a band offset that agrees well with experiments. The hopping rate is calculated with the Marcus theory, and the hopping-rate dependences on the gate potential and defect distances are revealed, as well as the range of fluctuation results from amorphous structural variation. We also analyze the result with the simple WKB model and find a major difference in the description of the coupling constant decay with the defect-semiconductor distance. Our results provide the ab initio simulation insights for this important carrier-trapping process for device operation.

Although the direct or indirect nature of the bandgap transition is an essential parameter of semiconductors for optoelectronic applications, the understanding why some of the conventional semiconductors have direct or indirect bandgaps remains ambiguous. In this Letter, we revealed that the existence of the occupied cation d bands is a prime element in determining the directness of the bandgap of semiconductors through the s-d and p-d couplings, which push the conduction band energy levels at the X- and L-valley up, but leaves the {\Gamma}-valley conduction state unchanged. This unified theory unambiguously explains why Diamond, Si, Ge, and Al-containing group III-V semiconductors, which do not have active occupied d bands, have indirect bandgaps and remaining common semiconductors, except GaP, have direct bandgaps. Besides s-d and p-d couplings, bond length and electronegativity of anions are two remaining factors regulating the energy ordering of the {\Gamma}-, X-, and L-valley of the conduction band, and are responsible for the anomalous bandgap behaviors in GaN, GaP, and GaAs that have direct, indirect, and direct bandgaps, respectively, despite the fact that N, P, and As are in ascending order of the atomic number. This understanding will shed light on the design of new direct bandgap light-emitting materials., Comment: 15 pages, 4 figures

The self-assembled quantum dots (QDs) provide an ideal platform for realization of quantum information technology because it provides on demand single photons, entangled photon pairs from biexciton cascade pro- cess, single spin qubits, and so on. The fine structure splitting (FSS) of exciton is a fundamental property of QDs for thees applications. From the symmetry point of view, since the two bright exciton states belong to two different representations for QDs with C2v symmetry, they should not only have different energies, but also have different lifetimes, which is termed exciton lifetime asymmetry. In contrast to extensively studied FSS, the investigation of the exciton lifetime asymmetry is still missed in literature. In this work, we carried out the first investigation of the exciton lifetime asymmetry in self-assembled QDs and presented a theory to deduce lifetime asymmetry indirectly from measurable qualities of QDs. We further revealed that intrinsic lifetimes and their asymmetry are fundamental quantities of QDs, which determine the bound of the extrinsic lifetime asymmetries, polarization angles, FSSs, and their evolution under uniaxial external forces. Our findings provide an important basis to deeply understanding properties of QDs., 6 figures, 9 pages. Comments are welcome

As Moore's law approaches its end, two-dimensional (2D) materials are intensely studied for their potentials as one of the ``More than Moore' (MM) devices. However, the ultimate performance limits and the optimal design parameters for such devices are still unknown. One common problem for the 2D-material-based device is the relative weak on-current. In this study, two-dimensional Schottky-barrier field-effect transistors (SBFETs) consisting of in-plane heterojunctions of 1T metallic-phase and 2H semiconducting-phase transition-metal dichalcogenides (TMDs) are studied following the recent experimental synthesis of such devices at a much larger scale. Our ab initio simulation reveals the ultimate performance limits of such devices and offers suggestions for better TMD materials. Our study shows that the Schottky-barrier heights (SBHs) of the in-plane 1T/2H contacts are smaller than the SBHs of out-of-plane contacts, and the contact coupling is also stronger in the in-plane contact. Due to the atomic thickness of the monolayer TMD, the average subthreshold swing of the in-plane TMD-SBFETs is found to be close to the limit of 60 mV/dec, and smaller than that of the out-of-plane TMD-SBFET device. Different TMDs are considered and it is found that the in-plane $\mathrm{WT}{\mathrm{e}}_{2}\text{\ensuremath{-}}\mathrm{SBFET}$ provides the best performance and can satisfy the performance requirement of the sub-10-nm high-performance transistor outlined by the International Technology Roadmap for Semiconductors, and thus could be developed into a viable sub-10-nm MM device in the future.

The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

Ab initio atomic relaxations often take large numbers of steps and long times to converge, especially when the initial atomic configurations are far from the local minimum or there are curved and narrow valleys in the multidimensional potentials. An atomic relaxation method based on on-the-flight force learning and a corresponding curved-line search algorithm is presented to accelerate this process. Results demonstrate the superior performance of this method for metal and magnetic clusters when compared with the conventional conjugate-gradient method.

We present a method to approximate the Hessian matrix of the Born-Oppenheimer energy landscape by using a simple force field model whose parameters are fitted to on-the-flight ab-initio results. The inversed Hessian matrix is used as the preconditioner of conjugate gradient algorithms to speed up the atomic structure relaxation, resulting in a speedup factor of 2 to 5 on systems of bulk, slab, sheets, and atomic clusters. Because the force field model employed is simple and general, the parameter fitting is straightforward; the method is applicable to a variety of complicated systems for minimum structure relaxation. In the metal cluster new structure search, the new method yields better structures than the one obtained before with conventional algorithms.

The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.

In the framework of effective mass envelope function theory, absorption coefficients are calculated for intraband (intersubband in the conduction band) optical transition in InAs/GaAs coupled quantum dots. In our calculation the microscpic distributon of the strain is taken into account. The absorption in coupled quantum dots is quite different from that of superlattices. In superlattices, the absorption does not exist when the electric vector of light is parallel to the superlattice plane (perpendicular incident). This introduces somewhat of a difficulty in fabricating the infrared detector. In quantum dots, the absorption exists when light incident along any direction, which may be good for fabricating infrared detectors.

Amorphous semiconductors are known to give rise to greatly reduced conductivity relative to their crystalline counterparts, which makes the recent development of amorphous oxide semiconductors with high electron mobility unexpected. Using first-principles molecular dynamics and electronic structure simulations, we have analyzed the electronic and optical properties of covalent and ionic oxide amorphous semiconductors. We observe that in covalent systems, amorphization introduces deep defect states inside the gap, resulting in a substantial deterioration of electrical conductivity. In contrast, in ionic systems, such as the transparent conducting oxide ZnO, amorphization does not create deep carrier-recombination centers, so the oxides still exhibit good conductivity and visible transparency relative to the crystalline phases. The origin of the conductivity imbalance between covalent and ionic amorphous semiconductors can be explained using a band coupling mechanism.

In the framework of effective-mass envelope-function theory, the optical transitions of InAs/GaAs strained coupled quantum dots grown on GaAs (100) oriented substrates are studied. At the Gamma point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. In calculations, the effects due to the different effective masses of electrons and holes in different materials are included. Our theoretical results are in good agreement with the available experimental data.

CHINESE ACAD SCI, INST SEMICOND, NATL LAB SUPERLATTICES & MICROSTRUCT, BEIJING 100083, PEOPLES R CHINA; HEBEI TEACHERS UNIV, DEPT PHYS, SHIJIAZHUANG 050016, PEOPLES R CHINA

In theoretical studies of thin film and nanostructured semiconductors, pseudohydrogen (PH) is widely used to passivate the surface dangling bonds. Based on these calculations, it is often believed that nanostructured semiconductors, due to quantum confinement, have a larger band gap than their bulk counterparts. Using first-principles band structure theory calculation and comparing systematically the differences between PH-passivated and real-hydrogen--passivated (RH-passivated) semiconductor surfaces and nanocrystals, we show that, unlike PH passivation that always increases the band gap with respect to the bulk value, RH passivation of the nanostructured semiconductors can either increase or decrease the band gap, depending on the ionicity of the nanocompounds. The differences between PH and RH passivations decreases when the covalency of the semiconductor increases and can be explained using a band coupling model. This observation greatly increases the tunability of nanostructured semiconductor properties, especially for wide-gap ionic semiconductors.

We study the Berry phase of the ground state and excited states in the Lipkin model. Using the Schwinger representation of spin operators, we get the expression for the Berry phase of the ground state in the thermodynamic limit and numerically calculate that of the excited states in finite sizes. We find that the Berry phase of the ground state is nonanalytic, but its derivative (with respect to the control parameter $\ensuremath{\alpha}$, see text) is finite even in the thermodynamic limit. Whereas, for the excited states, the Berry phase tends to be nonanalytic, and its derivative approaches $\ensuremath{\infty}$ in the thermodynamic limit and in the vicinity of the critical point of the excited-state quantum phase transition.

The electronic structures of GaAs/Ga1-xAlxAs quantum wires (corrugated superlattices) grown on (311)-oriented substrates are studied in the framework of the effective-mass envelope-function method. The electron and hole subband structure and optical transition matrix elements are calculated. When x=1, the results are compared with experiments, and it is found that the direct transition becomes an indirect transition as the widths of well and barrier become smaller.

Jiangxi Education Department of China [GJJ11240]; National Basic Research Program of China (973 Program) [G2009CB929300]; National Natural Science Foundation of China [60821061]; Natural Science Foundation of Jiangxi Province, China [0550050]

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N- (Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of ${\text{GaAs}}_{1\ensuremath{-}x}{\text{N}}_{x}$ becomes an N-derived state and the valence-band edge of ${\text{GaAs}}_{1\ensuremath{-}x}{\text{Bi}}_{x}$ becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

The intrinsic large electronegativity of O 2p character of the valence-band maximum (VBM) of ZnO renders it extremely difficult to be doped p type. We show from density functional calculation that such VBM characteristic can be altered by compensated donor-acceptor pairs, thus improve the p-type dopability. By incorporating (Ti+C) or (Zr+C) into ZnO simultaneously, a fully occupied impurity band that has the C 2p character is created above the VBM of host ZnO. Subsequent doping by N in ZnO: (Ti+C) and ZnO: (Zr+C) lead to the acceptor ionization energies of 0.18 and 0.13 eV, respectively, which is about 200 meV lower than it is in pure ZnO.

We study the effects of the Dzyaloshinski-Moriya (DM) anisotropic interaction on the ground-state properties of the Heisenberg $XY$ spin chain by means of the fidelity susceptibility, order parameter, and entanglement entropy. Our results show that the DM interaction could influence the distribution of the regions of quantum phase transitions and cause different critical regions in the $XY$ spin model. Meanwhile, the DM interaction has effective influence on the degree of entanglement of the system and could be used to increase the entanglement of the spin system.

Using first-principles electronic structure calculations we find that the titanium vacancy and divacancy may be responsible for the unexpected ferromagnetism in undoped anatase TiO2. An isolated titanium vacancy produces a magnetic moment of 3.5 mu(B), and an isolated titanium divacancy produces a magnetic moment of 2.0 mu(B). The origin of the collective magnetic moments is the holes introduced by the titanium vacancy or divacancy in the narrow nonbonding oxygen 2p(pi) band. At the center of the divacancy, an O-2 dimer forms during the relaxation, which lowers the total energy of the system and leads to the decrease in the total magnetic moment due to a hole compensation mechanism. For both the two native defects, the ferromagnetic state is more stable than the antiferromagnetic state.

We study the spin Hall effect in the kagom\'{e} lattice with Rashba spin-orbit coupling. The conserved spin Hall conductance $\sigma_{xy}^{s}$ (see text) and its two components, i.e., the conventional term $\sigma_{xy}^{s0}$ and the spin-torque-dipole term $\sigma_{xy}^{s\tau}$, are numerically calculated, which show a series of plateaus as a function of the electron Fermi energy $\epsilon_{F}$. A consistent two-band analysis, as well as a Berry-phase interpretation, is also given. We show that these plateaus are a consequence of the various Fermi-surface topologies when tuning $\epsilon_{F}$. In particular, we predict that compared to the case with the Fermi surface encircling the $\mathbf{\Gamma}$ point in the Brillouin zone, the amplitude of the spin Hall conductance with the Fermi surface encircling the $\mathbf{K}$ points is twice enhanced, which makes it highly meaningful in the future to systematically carry out studies of the $\mathbf{K}$-valley spintronics., Comment: 7 pages, 3 figures. Phys. Rev. B (in press)

To improve the photoelectrochemical activity of TiO2 for hydrogen production through water splitting, the band edges of TiO2 should be tailored to match with visible light absorption and the hydrogen or oxygen production levels. By analyzing the band structure of TiO2 and the chemical potentials of the dopants, we propose that the band edges of TiO2 can be modified by passivated codopants such as (Mo+C) to shift the valence band edge up significantly, while leaving the conduction band edge almost unchanged, thus satisfying the stringent requirements. The design principle for the band-edge modification should be applicable to other wide-band-gap semiconductors.

By means of the second derivative of the ground-state and first-excited energy, the quantum phase transitions (QPTs) for the distorted diamond chain (DDC) with ferromagnetic and antiferromagnetic frustrated interactions and the trimerized case are investigated, respectively. Our results show the plentiful quantum phases owing to the spin interaction competitions in the model. Meanwhile, by using the transfer-matrix renormalization-group technique, we study the two-site thermal entanglement of the DDC model in the thermodynamic limit for a further understanding of the QPTs.

The Mg-Ga acceptor energy levels in GaN and random Al8In4Ga20N32 quaternary alloys are calculated using the first-principles band-structure method. We show that due to wave function localization, the MgGa acceptor energy level in the alloy is significantly lower than that of GaN, although the two materials have nearly identical band gaps. Our study demonstrates that forming AlxInyGa1-x-yN quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system.

Doping difficulty in semiconductor nanocrystals has been observed and its origin is currently under debate. It is not clear whether this phenomenon is energetic or depends on the growth kinetics. Using first-principles method, we show that the transition energies and defect formation energies of the donor and acceptor defects always increase as the quantum dot sizes decrease. However, for isovalent impurities, the changes of the defect formation energies are rather small. The origin of the calculated trends is explained using simple band-energy-level models.

The electronic structure, Zeeman splitting, and g factor of Mn-doped CdS nanowires are studied using the k center dot p method and the mean field model. It is found that the Zeeman splittings of the hole ground states can be highly anisotropic, and so can their g factors. The hole ground states vary a lot with the radius. For thin wire, g(z) (g factor when B is along the z direction or the wire direction) is a little smaller than g(x). For thick wire, g(z) is mcuh larger than g(x) at small magnetic field, and the anisotropic factor g(z)/g(x) decreases as B increases. A small transverse electric field can change the Zeeman splitting dramatically, so tune the g(x) from nearly 0 to 70, in thick wire. The anisotropic factor decreases rapidly as the electric field increases. On the other hand, the Zeeman splittings of the electron ground states are always isotropic.

We study the disentanglement of two spin qubits which interact with a general XY spin-chain environment. The dynamical process of the disentanglement is numerically and analytically investigated in the vicinity of quantum phase transition (QPT) of the spin chain in both weak and strong coupling cases. We find that the disentanglement of the two qubits is in general enhanced greatly when the environmental spin chain is exposed to QPT. We give a detailed analysis to facilitate the understanding of the QPT-enhanced decaying behavior of the disentanglement factor. Furthermore, the scaling behavior in the disentanglement dynamics is also revealed and analyzed., Comment: 17 pages, 5 figures

We introduce the concept of the Loschmidt echo (LE) to the space of the reduced density matrix of spin and fermionic systems to study the density matrix LEs (DMLEs) of the one-dimensional extended Hubbard model and the transverse field Ising model. Our results show that the DMLEs are remarkably influenced by the criticality of the system, and the method is a convenient way to study quantum phase transitions.

Using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-III and group-V impurities doped in H passivated Si quantum dots (QDs) as functions of the QD size. The general chemical trends found in the QDs are similar to that found in bulk Si. We show that defect formation energy and transition energy level increase when the size of the QD decreases; thus, doping in small Si QDs becomes more difficult. ${\mathrm{B}}_{\mathrm{Si}}$ has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the H passivated Si QD. On the other hand, ${\mathrm{P}}_{\mathrm{Si}}$ has the smallest donor ionization energy, and it prefers to stay at the interior of the H passivated Si QD. We explained the general chemical trends and the dependence on the QD size in terms of the atomic chemical potentials and quantum confinement effects.

We study the Loschmidt echo (LE) of a coupled system consisting of a central spin and its surrounding environment described by a general XY spin-chain model. The quantum dynamics of the LE is shown to be remarkably influenced by the quantum criticality of the spin chain. In particular, the decaying behavior of the LE is found to be controlled by the anisotropy parameter of the spin chain. Furthermore, we show that due to the coupling to the spin chain, the ground-state Berry phase for the central spin becomes nonanalytical and its derivative with respect to the magnetic parameter lambda in spin chain diverges along the critical line lambda=1, which suggests an alternative measurement of the quantum criticality of the spin chain.

p-type doping is a great challenge for the full utilization of ZnO as short-wavelength optoelectronic material. Due to a large electronegative characteristic of oxygen, the ionization energy of acceptors in ZnO is usually too high. By analyzing the defect wave-function character, we propose several approaches to lower the acceptor ionization energy by codoping acceptors with donor or isovalent atoms. Using the first-principles band-structure method, we show that the acceptor transition energies of V-Zn-O-O can be reduced by introducing F-O next to V-Zn to reduce electronic potential, whereas the acceptor transition energy of N-O-nZn(Zn) (n=1-4) can be reduced if we replace Zn by isovalent Mg or Be to reduce the anion and cation kinetic p-d repulsion, as well as the electronic potential.

We have investigated the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two quantum dot (QD) spins mediated by a two-dimensional electron gas in the simplest case. The oscillation of the RKKY interaction versus the distance between the two QDs consists of two ingredients with different periods. The RKKY interaction undulates with the variation of the singly occupied QD level, which provides us a way to tune the magnitude and the sign of the RKKY interaction by pushing the QD level up and down. These conclusions are quite different from the usual result obtained by replacing the s-d exchange interaction with its value at the Fermi level. The influence on the RKKY interaction brought about under more realistic conditions is also discussed.

We have calculated the in-plane conductance of a barrier with the Dresselhaus spin-orbit interaction, which is sandwiched between two spin-polarized materials aligned arbitrarily. Besides a transmitted in-plane current which arises on the drain side as pointed out in Phys. Rev. Lett. 93, 056601 (2004), a reflected in-plane current always appears simultaneously on the source side near the interface of the barrier. The spin polarization of the source affects the transmitted current more than the reflected one, and conversely the spin polarization of the drain affects the reflected current more. The relationship between transmitted current and the reflected one has been studied.