1. Site-selective transient photoluminescence enhancement of impurity-trapped excitons in NaMgF3:Yb2+
- Author
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Giel Berden, Andries Meijerink, Michael F. Reid, Roger J. Reeves, Pubudu S. Senanayake, Jon-Paul R. Wells, and Rosa B. Hughes-Currie
- Subjects
Nuclear magnetic resonance ,Photoluminescence ,Materials science ,Impurity ,Exciton ,Doping ,Phosphor ,Electron ,Atomic physics ,Condensed Matter Physics ,Penning trap ,Excitation ,Electronic, Optical and Magnetic Materials - Abstract
The excited-state structure of impurity-trapped excitons are measured in a multisite system. We use a two-color (UV-IR) pulsed photoluminescence enhancement technique, which probes the interlevel transitions and dynamics of impurity-trapped excitons in doped insulating phosphor materials. The technique is applied to NaMgF${}_{3}$:Yb${}^{2+}$, which exhibits emission from two charge-compensation centers with peaks at 22300 cm${}^{\ensuremath{-}1}$ (448 nm) and 24000 cm${}^{\ensuremath{-}1}$ (417 nm). The observed photoluminescence enhancement is caused by a combination of intraexcitonic excitation and electron trap liberation. The electron traps are inferred to have a depth of approximately 800 cm${}^{\ensuremath{-}1}$.
- Published
- 2013
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