40 results on '"Dunstan, D"'
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2. Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
3. Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101 , 125421 (2020)]
4. Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers
5. 3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite?
6. Effect of humidity on the interlayer interaction of bilayer graphene
7. Graphite under uniaxial compression along thecaxis: A parameter to relate out-of-plane strain to in-plane phonon frequency
8. Anomalous Plasticity in the Cyclic Torsion of Micron Scale Metallic Wires
9. Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet
10. Elastic Limit and Strain Hardening of Thin Wires in Torsion
11. Quantum molecular dynamics study of the pressure dependence of the ammonia inversion transition
12. Reply to “Comment on ‘Reappraisal of experimental values of third-order elastic constants of some cubic semiconductors and metals’ ”
13. Nanoscale pressure effects in individual double-wall carbon nanotubes
14. Reappraisal of experimental values of third-order elastic constants of some cubic semiconductors and metals
15. Raman scattering in hexagonal InN under high pressure
16. Discontinuous Tangential Stress in Double Wall Carbon Nanotubes
17. Harmonic and anharmonic components of third-order elastic constants
18. Photoluminescence of (111)InxGa1−xAs/GaAsstrained-layer quantum wells under hydrostatic pressure
19. Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys
20. Pressure dependence of the direct band gap in tetrahedral semiconductors
21. Coherency Strain as an Athermal Strengthening Mechanism
22. Pressure dependence of the photoluminescence of strained (001) and (111)InxGa1−xAs quantum wells
23. Exciton formation and hole-spin relaxation in intrinsic quantum wells
24. Strain and interdiffusion in semiconductor heterostructures
25. Thermal quenching and retrapping effects in the photoluminescence ofInyGa1−yAs/GaAs/AlxGa1−xAs multiple-quantum-well structures
26. Evidence of type-I band offsets in strainedGaAs1−xSbx/GaAs quantum wells from high-pressure photoluminescence
27. Photoreflectance and piezophotoreflectance studies of strained-layerInxGa1−xAs-GaAs quantum wells
28. Influence of the spin-orbit split-off valence band inInxGa1−xAs/AlyGa1−yAs strained-layer quantum wells
29. Phase transitions in CdTe/ZnTe strained-layer superlattices
30. High-pressure investigation of GaSb andGa1−xInxSb/GaSb quantum wells
31. Hydrostatic pressure coefficients of the photoluminescence ofInxGa1−xAs/GaAs strained-layer quantum wells
32. Photoluminescence in hydrogenated amorphous silicon
33. Phonon interactions in the tail states ofa-Si:H
34. Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure
35. Comment on nonradiative-recombination kinetics ina−Si:H
36. Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/AlxGa1−xAs quantum-well structures
37. New model of the temperature dependence of the 1.4-eV emission band of amorphous silicon
38. Comment on "Optical Bias Control of Dispersive Relaxations ina-Si: H"
39. Hydrostatic and uniaxial pressure coefficients of CdTe
40. Comparison of analytic and Monte Carlo results in distant-pair recombination
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