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Ba3Si6O12N2:Eu2+ and Ba3Si6O9N4:Eu2+ have strikingly similar atomistic structures, but the former is an efficient green phosphor at working temperature while the latter is a bluish-green phosphor whose luminescence decreases quite fast with temperature. Aiming at the understanding of such different behavior, we compute the quasiparticle electronic band structure of the two hosts, Ba3Si6O12N2 and Ba3Si6O9N4, thanks to many-body perturbation theory in the G0W0 approximation. The gap differs by about 0.43 eV. We analyze the eigenfunctions at the top of the valence band, at the bottom of the conduction band, and also the chemical shifts for the Ba site in the two hosts. The valence bands, directly impacted by the different stoichiometric ratio, are not thought to play a large role in the luminescence. Deceivingly, the dispersive bottom of the conduction band, directly related to luminescent properties, is similar in both compounds. The spatial topology of the probability density of the bottom of the conduction bands differs, as well as the location of the 5d peak, with a much higher energy than the bottom of the conduction band in Ba3Si6O12N2 than in Ba3Si6O9N4. Electromagnetic absorption spectra are also computed for both compounds. [ABSTRACT FROM AUTHOR]

Carefully converged calculations are performed for the band gap of ZnO within many-body perturbation theory (G0W0 approximation). The results obtained using four different well-established plasmon-pole models are compared with those of explicit calculations without such models (the contour-deformation approach). This comparison shows that, surprisingly, plasmon-pole models depending on the f-sum rule gives less precise results. In particular, it confirms that the band gap of ZnO is underestimated in the G0W0 approach as compared to experiment, contrary to the recent claim of Shih et al. [Phys. Rev. Lett. 105, 146401 (2010)]. [ABSTRACT FROM AUTHOR]

Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications.