Search

We investigate the properties of the magnetocapacitance and dissipation factor of epitaxial graphene Hall bars with different electrode configurations to gain insight into the underlying physical mechanisms. The dependence of magnetocapacitance and dissipation factor on the magnetic field shows how the screening ability of the two-dimensional electron gas (2DEG) changes at the transition from the nonquantized to the quantized state. Both magnetocapacitance and dissipation factor exhibit a characteristic and correlated voltage dependence, which is attributed to the alternating contraction and expansion of the nonscreening 2DEG regions due to the alternating local electric field. Two regimes with seemingly different voltage dependencies are explained as the limiting cases of weak and strong electric fields of the same general voltage dependence. Electric fields in the plane of the 2DEG are found to cause about three orders of magnitude more ac dissipation than perpendicular electric fields. This strong directionality is attributed to the fact that the electrons are mobile in the plane of the 2DEG but are confined in the third dimension. In the quantized state, not only the screening edge of the 2DEG but also compressible puddles embedded in the bulk cause ac dissipation, as follows from the measured frequency dependence. Finally, characteristic parameters like the width of the screening edge, the threshold voltage, and the charging time of the compressible puddles are determined. [ABSTRACT FROM AUTHOR]

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current, and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the Kubakaddi theory [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations, a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and quantum Hall breakdown sets in. [ABSTRACT FROM AUTHOR]