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The non-centro-symmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin- split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized p-n junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy (STM) and spectroscopy (STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space-charge area in typical p-n junctions. [ABSTRACT FROM AUTHOR]

We report a comprehensive study of the paradigmatic quasi-ID compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below TCDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at TCDW. [ABSTRACT FROM AUTHOR]

Boron vacancies at the Si(111):B-√3 surface are model systems in the comprehension of strongly correlated semiconductor surfaces. By using scanning tunneling spectroscopy, the origin of the single-vacancy electronic structure is addressed. It is shown to originate from the localization of a well-identified dangling-bond surface state with significant B character. The bivacancy defect, which is characterized by energy-split bonding and antibonding states, is interpreted within the textbook diatomic molecule picture. From the hopping parameter, we determine the bandwidth of the surface state from which the impurity state derives and evaluate the strength of many-body effects. Our analysis supports the realization of the Mott-Hubbard insulator state in half-filled dangling-bond surface states on √3-reconstructed surfaces, as proposed recently for SiC(0001), Sn/Ge(111), and Sn/Si(111). [ABSTRACT FROM AUTHOR]

Ab initio density-functional theory calculations, photoemission spectroscopy (PES), scanning tunneling microscopy, and spectroscopy (STM, STS) have been used to solve the 2√3 x 2√3R30 surface reconstruction observed previously by LEED on 0.5 ML K/Si:B. A large K-induced vertical lattice relaxation occurring only for 3/4 of Si adatoms is shown to quantitatively explain both the chemical shift of 1.14 eV and the ratio 1/3 measured on the two distinct B 1s core levels. A gap is observed between valence and conduction surface bands by ARPES and STS which is shown to have mainly a Si-B character. Finally, the calculated STM images agree with our experimental results. This work solves the controversy about the origin of the insulating ground state of alkali-metal/Si(111):B semiconducting interfaces which were believed previously to be related to many-body effects. [ABSTRACT FROM AUTHOR]

From scanning tunneling spectroscopy measurements, we recently found evidence for the effect of electron-phonon interactions on the lifetime of hot electrons and holes. This information was obtained by measuring the linewidth of quantum well states resulting from the confinement of Shockley states in truncated hexagonal Ag nanopyramids. In the present paper, we show that a careful analysis allows us to obtain both the intrinsic and extrinsic broadening contributions. This latter contribution results from the lossy boundary scattering which is strongly reduced in this peculiar geometry. Indeed, we deduce the energy dependence of the reflection coefficient which remains higher, as usually observed in nanostructures like adatom islands and quantum corrals. [ABSTRACT FROM AUTHOR]

In this paper, we report on the experimental determination of alkali absolute coverage in the K/Si(111):B- 2√3 x 2√3R30° surface. To this end, we carried out a comparative study with the closest system, namely, K/Si(111)-3 x 1, for which potassium coverage has been widely demonstrated to be 1/3 of a monolayer. We used x-ray photoemission spectroscopy to count and compare the number of potassium atoms in both surfaces, together with a scanning tunneling microscopy in order to check the completion of these ultrathin layers. The analysis leads to a 1/2 monolayer coverage in the 2√3 x 2√3R30° surface, that is six potassium atoms per unit cell. Assuming this coverage, we can propose a simple model structure with potassium atoms arranged in trimers; we discuss the effect of such a reconstruction in terms of two distinct "up" and "down" Si adatom sites as well as the resulting surface electronic properties. [ABSTRACT FROM AUTHOR]

Bulk Rashba systems BiTeX (X=I, Br, Cl) are emerging as important candidates for developing spintronics devices because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need to study the spin texture of strongly spin-orbit-coupled materials has recently promoted circular dichroic angular resolved photoelectron spectroscopy (CD-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon-energy-dependent study of the CD-ARPES spectra in BiTeX (X=I, Br, Cl). Our work reveals a large variation in the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon-energy dependence for the CD-ARPES signals in the bulk Rashba semiconductor BiTeX (X=I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave functions involved in the photoemission process. This phase difference can be due to initial- or final-state effects. In the former case the phase difference results in possible interference effects among the photoelectrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves. [ABSTRACT FROM AUTHOR]

We observe a giant spin-orbit splitting in the bulk and surface states of the noncentrosymmetric semiconductor BiTel. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases, it intersects spin-polarized bands, in the correspond-ing surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics--a large, robust spin splitting and ambipolar conduc-tion--are present in this material. [ABSTRACT FROM AUTHOR]

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe(4))(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T(CDW)=263  K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T(CDW).

We present a scanning tunneling microscopy investigation of the dynamics of hot electrons and holes in Ag pyramidal nanostructures. The geometry of the nanostructure leads to a strong reduction of the decay mechanism into the bulk states and then to a large reflection coefficient of the surface electronic waves. Therefore, in contrast to quantum corrals and adatom islands which show a dominant lossy scattering contribution to the linewidth, the narrow observed structures in the differential conductivity spectra reveal the expected linewidth minimum at the Fermi energy. The electron-phonon contribution to the lifetime is shown to be dominant, in agreement with previous photoemission measurements.