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Ultrafast pump-probe experiments can reveal the physics of complex materials by triggering a reaction with short laser pulses and then looking for the response. However, the repetition rate in such experiments is limited because the sample needs to cool down back to the initial state between subsequent laser excitations. Here we investigate by theory and experiment how this cooling rate depends on the shape and dimensionality of the material. Using VO_{2} as the example, a strongly correlated material with an ultrafast phase transition with large latent heat, we report more than six orders of magnitude of change between the cooling times of freestanding thin films, thin films on a substrate, and bulk materials. A numerical latent-heat model reproduces all results and can therefore be generally used to predict the speed of the back reaction in almost all kinds of phase-change materials.

Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 are synthesized and investigated. We find a superconducting dome x between 0.12 and 0.235 accompanied by a weakly insulating behavior in both under- and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x≥0.18, the normal state Hall coefficient (RH) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes decreases monotonically with decreasing x from the overdoped side and approaches the superconducting dome at the midpoint, suggesting a reconstruction of the Fermi surface with the dopant concentration across the dome. [ABSTRACT FROM AUTHOR]

Moiré-pattern-based potential engineering has become an important way to explore exotic physics in a variety of two-dimensional condensed matter systems. While these potentials have induced correlated phenomena in almost all commonly studied 2D materials, monolayer graphene has remained an exception. We demonstrate theoretically that a single layer of graphene, when placed between two bulk boron nitride crystal substrates with the appropriate twist angles, can support a robust topological ultraflat band emerging as the second hole band. This is one of the simplest platforms to design and exploit topological flat bands.

Infinite-layer Nd_{1-x}Sr_{x}NiO_{2} thin films with Sr doping level x from 0.08 to 0.3 are synthesized and investigated. We find a superconducting dome x between 0.12 and 0.235 accompanied by a weakly insulating behavior in both under- and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x≥0.18, the normal state Hall coefficient (R_{H}) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes decreases monotonically with decreasing x from the overdoped side and approaches the superconducting dome at the midpoint, suggesting a reconstruction of the Fermi surface with the dopant concentration across the dome.