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This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 〈110〉 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs., Intel Corporation, Semiconductor Research Corporation. Center for Materials, Structures and Devices

We used depth-resolved microcathodoluminescence spectroscopy (DRCLS) and Kelvin probe force microscopy (KPFM) to measure and map the temperature distribution and defect generation inside state-of-the-art AlGaN/GaN-based high electron mobility transistors (HEMTs) on a scale of tens of nanometers during device operation. DRCLS measurements of near band edge energies across the HEMT’s source-gate-drain regions reveal monotonic temperature increases across the submicron gate-drain channel, peaking under the drain side of the gate. DRCLS defect emissions mapped laterally and localized depthwise near the two-dimensional electron gas interface increase with device operation under the drain-side gate and correlate with higher KPFM surface potential maps., United States. Office of Naval Research (Grant N00014-08-1-0655)