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The temperature and the power dependent photoluminescence (PL) of two types of Ge quantum dots (QDs) (small hut cluster and large dome) coincidentally grown on a strained Si0.7Ge0.3 buffer layer were systematically studied. Two PL peaks from the two types of QDs are demonstrated and show different behaviors with increasing temperature. Under low excitation power, the intensity and the energy position of PL peak from small QDs have maximum values at a mediate temperature. Such anomalous behaviors of PL spectra are qualitatively explained by a model based on thermally activated resonant tunneling of holes from large QDs to small QDs. [ABSTRACT FROM AUTHOR]

A correction to the article "Ultrafast imaging of photoelectron packets generated from graphite surface," published in a 2009 issue is presented.