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Investigates strained quaternary quantum well lasers optimized for high temperature operation. Effects of temperature ranging from 25 to 85 degree Celsius on the slope efficiency of the lasers; Light-current characteristics of a strained gallium-indium-arsenic-phosphorus quantum well laser; Structural parameters of the multiquantum well lasers.

Investigates the high temperature performance of indium gallium arsenic phosphide laser operating at a wavelength of 1.3 micrometer. Comparison between conventional separate confinement heterostructure and compressively strained multiquantum well structure; Link between threshold gain and operating temperature.

Examines the edge growth rate enhancement of indium phosphide and lattice matched indium gallium arsenide layers grown on silica-masked InP substrate. Growth of the sample by metalorganic molecular beam epitaxy; Use of scanning force microscopy; Dependence of the migration length on metalorganic and hydride flows.

Investigates the metalorganic molecular beam epitaxy of indium gallium arsenic phosphide quaternary layers. Dependence of gallium incorporation on the growth temperature; Increase of photoluminescence linewidth; Measurement of the threshold current densities.