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Presents a study which incorporated nitrogen and hydrogen during the nitridation of silicon dioxide. Measurement of nitrogen content in the films; Implication of hydrogenation which occurs during the nitridation of oxides; Quantitative details on hydrogen content.

Examines the hydrogen concentration in silicon oxinitride[subx]N[suby] films as a function of the relative oxygen concentration in the films. Method used as an analyzing technique for hydrogen; Process used in measuring the relative hydrogen, deuterium, oxygen and nitrogen concentrations in the film; Implications for the electrical performance of oxynitrides.

We have studied the linewidth around threshold of the lasing and nonlasing polarization mode (x and y) in a TEM[sub 00] oxide-confined vertical-cavity semiconductor laser (VCSEL). We experimentally demonstrate: (i) that the nonlasing mode shows surprising behavior when the lasing mode passes through threshold, and (ii) that the polarization fluctuations in a VCSEL are limited by the same quantum noise that sets its finite Schawlow-Townes linewidth. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Shows how the limited polarization stability of vertical-cavity semiconductor lasers is related to the small dichroism and large quantum noise. Introduction of several techniques top measure dichroism and noise; Suitable polarization projections.

Hydrogen in low-pressure chemical vapor deposited oxynitride films was measured using elastic recoil detection with 2 MeV He ions. A distinction between N- and Si-bonded hydrogen could be made for films deposited from ND3 instead of NH3. The analyses reveal that on an average three times as much hydrogen is incorporated as NH relative to SiH, and that a maximum in this ratio is present in oxynitride with a composition around O/N=0.3. This optimum coincides with a maximum in total hydrogen content in the film of 3.2 at. %. Hydrogen desorption occurs in a narrow temperature interval around 950 °C and proceeds virtually in an identical way for both binding types. [ABSTRACT FROM AUTHOR]

The thermal reaction of Ti with Si3N4 was studied over the temperature range from 500 to 800 °C with Auger electron spectroscopy, Rutherford backscattering spectrometry, and transmission electron microscopy. The initial reaction consumes part of the silicon nitride and yields a two-layer morphology of Ti(N) on top of Ti5Si3. As the reaction proceeds, the Ti5Si3 layer is converted to TiSi2. At 800 °C, a multilayer morphology is observed containing primarily TiN and TiSi2. [ABSTRACT FROM AUTHOR]

We report the observation of strong self-pulsations in oxide-confined vertical-cavity surface-emitting lasers. From optical spectra and intensity noise spectra, we deduce that the pulses are strongly chirped. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We have observed stable single-mode oscillation of optically pumped vertical-cavity surface-emitting lasers (i.e., without fabricated aperture) in several high-order daisy modes. The surprising stability of the nodal lines of a daisy mode is explained as being due to the combined action of many microscopic defects; when a daisy mode is moved across the wafer, the effective correlation length of the orientation of the pinning is of the order of 1 μm. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]