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Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 5×10[sup 9]/cm[sup 2], however, InAsSb QDs of density as high as 4×10[sup 10]/cm[sup 2] could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In[sub 0.53]Ga[sub 0.47]As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2 μm. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 °C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm[sup 2]. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/°C is measured, which is even lower than that caused by the refractive index change. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Supercapacitors or electrochemical capacitors are receiving greater interest because of their high-power density, long life, and low maintenance. We have synthesized CuS nanoparticles and graphene oxide (CuS–GO) nanocomposites for supercapacitor applications because of their low cost and excellent electrochemical properties. The phase purity of each material was determined using powder XRD studies. The bandgap was determined by UV-visible spectrophotometric studies. Scanning electron microscope and transmission electron microscope images revealed the nano-scale morphology of the synthesized particles. All the electrochemical measurements were conducted in a standard three-electrode configuration, using a platinum wire as the counter electrode and Hg/HgO as the reference electrode. CuS and its composites with graphene oxide on nickel foam were used as working electrodes. All the electrochemical measurements were performed in 3M KOH solution. The CuS–GO nanocomposite electrode showed a specific capacitance of 250 F/g, 225 F/g, 182 F/g, 166 F/g, 161 F/g, and 158 F/g at a current density of 0.5 A/g, 1 A/g, 5 A/g, 10 A/g, 15 A/g, and 20 A/g, respectively. CuS–GO electrodes showed a specific capacitance retention of 70% after 5000 charge–discharge cycles at a current density of 5 A/g. [ABSTRACT FROM AUTHOR]