Search

A novel heterostructure of CdS nanoparticles/WO3 nanowhiskers was synthesized using a simple two-step process; thermal evaporation and chemical bath deposition. First, WO3 nanowhiskers (NWs) were grown on a tungsten substrate by thermal evaporation of WO3 powder in a tube furnace at 1050 °C. Sequentially, CdS nanoparticles (NPs) were deposited on WO3 nanowhiskers by chemical bath deposition. CdS nanoparticles modified WO3 nanowhiskers showed enhanced visible light absorption compared to bare WO3 nanowhiskers. The photocatalytic activity was studied by the photodegradation of methylene blue. CdS NP/WO3 NW heterostructures showed remarkably enhanced photodecomposition efficiencies compared to bare WO3 nanowhiskers. [ABSTRACT FROM AUTHOR]

We report the characteristics of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) grown on Si (111) substrate. Temperature-variable current-voltage (I-V) measurement from 80 K to 400 K reveals that forward current regimes can be distinguished by corresponding slopes in semi-logarithmic plot, which are associated with different forward conduction mechanisms of InGaN LED. Temperature-insensitive tunneling behavior appears to be dominant at low current injection regime for InGaN LEDs on Si. Conductive atomic force microscopy analysis indicates that V-pits associated with threading dislocations could be main leakage path of forward tunneling current of InGaN LED on Si. [ABSTRACT FROM AUTHOR]