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Gallium oxide is a newly emerged ultrawide bandgap (4.9 eV) semiconductor that is suitable as a combined electronics and radiation detection platform. We have experimentally demonstrated fast neutron and gamma-ray scintillation from Czochralski-grown β-Ga2O3 in a recent series (October 2023) of experiments at the unmoderated pulsed neutron spallation source located at the Los Alamos Neutron Science Center. Using the neutron time-of-flight (TOF) technique and a fast-gated intensified CCD camera, we observed energy-dependent neutron scintillation for neutron energies ranging from 1 to 400 MeV, including the 14.1 MeV neutron energy relevant to D–T fusion. Neutron flux is quantified and calibrated by cascading the scintillator after the fission chamber, enabling a detailed analysis of temporal and energy-dependent characteristics of the scintillation events. A pronounced scintillation signal from the spallation gamma flash with a temporal full width of half maximum of ∼4 ns is indicative of the material's rapid response. Neutron energy dependent scintillation is observed using the TOF method at a 22.6-m distance from the neutron source. These results highlight the possibility of developing a Ga2O3 based fusion neutron diagnostic platform integrated with both scintillation and electronics functions on the integrated chip scale. [ABSTRACT FROM AUTHOR]

Although the effect of the deformation field size on the mechanical strength of metallic glasses (MGs) has been investigated thoroughly, a few studies have investigated the effect of the deformation field size on the kinetic creep deformation behavior for these materials. This issue is addressed in the current work by investigating the nanoindentation creep kinetics of La-based MGs under the application of spherical indenters with two different tip radii and three different loading rates. The experimental data are fit to a viscoelastic model to extract the activation volume and relaxation time characteristics of the kinetic nanoindentation creep deformation of the samples. The results demonstrate that the nanoindentation creep kinetics are not only strongly dependent on the loading rate, but also vary significantly with the indenter tip radius. The deformation dynamics is interpreted by the stretched exponent β, indicating its relatively small value at a large loading rate along with a large indenter tip radius. Furthermore, the observed effect of the deformation field size can be attributed to an interplay between the deformation field under the spherical indenter and flow defects associated with the excess free volume, shear transition zone, or shear band embryo with an evolution that is essentially dependent on the loading rate. The current findings contribute to a fundamental understanding of the mechanism of shear softening during creep deformation in MGs. [ABSTRACT FROM AUTHOR]

With the development of microfluidic technology, new materials and fabrication methods have been constantly invented in the field of microfluidics. Bonding is one of the key steps for the fabrication of enclosed-channel microfluidic chips, which have been extensively explored by researchers globally. The main purpose of bonding is to seal/enclose fabricated microchannels for subsequent fluid manipulations. Conventional bonding methods are usually irreversible, and the forced detachment of the substrate and cover plate may lead to structural damage to the chip. Some of the current microfluidic applications require reversible bonding to reuse the chip or retrieve the contents inside the chip. Therefore, it is essential to develop reversible bonding methods to meet the requirements of various applications. This review introduces the most recent developments in reversible bonding methods in microfluidics and their corresponding applications. Finally, the perspective and outlook of reversible bonding technology were discussed in this review. [ABSTRACT FROM AUTHOR]

Radiation hard diagnostics are critical to the success of nuclear fusion at National Ignition Facility, Z, ITER, and prolonged space explorations. We have first demonstrated the exceptional proton radiation hardness of initial GaN devices and qualified their space flight and deployment for missions such as the Laser Interferometer Space Antenna and International Space Station. We have further conducted neutron radiation hardness experiments at Los Alamos Neutron Science Center by opening a new high fluence beam station. During 2014–2016, we irradiated multiple Aluminum Gallium Nitride (AlGaN) LEDs with a maximum fluence of 2.4 × 1013 neutrons/cm2 in 3 years and generated 54 161 current–voltage (I–V) scan traces. Our data processing program analyzes each and all I–V traces. In addition, we retrieved local temperature records to analyze and remove temperature effects in the outdoor environment. The I–V curve families of AlGaN UV LEDs with emitting wavelengths of 265, 275, and 310 nm were compared. The I–V curves of 265 nm AlGaN UV LEDs have the smallest deviations from the average value, while the I–V curves for 310 nm AlGaN LEDs showed the largest deviations from the average value. We have reached another important recommendation for the optimal use of multiple AlGaN optoelectronic devices or imaging arrays for inertially confined fusion diagnostics: Shorter wavelength devices at 265 nm exhibit more consistent radiation hardness performance than the 310 nm devices. Higher aluminum content LEDs or AlxGa1–xN devices with higher mole fraction x for generating shorter wavelengths have better radiation hardness for fusion diagnostics. [ABSTRACT FROM AUTHOR]

A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics. [ABSTRACT FROM AUTHOR]

We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body perturbation theory suggest that charge carrier recombination occurs predominantly via excitons in the extremely confined monolayer GaN/AlN heterostructures, with exciton binding energy exceeding 200 meV. We have further demonstrated deep ultraviolet light-emitting diodes (LEDs) with the incorporation of single and double monolayer GaN, which operate at 238 and 270 nm, respectively. These unique deep ultraviolet LEDs exhibit highly stable emission and a small turn-on voltage around 5 V. [ABSTRACT FROM AUTHOR]

Researches on the fracmemristor have aroused increasing interest in the last several years, but there are no reports on design of the discrete fracmemristor. Based on the fractional-order difference and the mathematical model of the charge-controlled memristor, the discrete fracmemristor is designed where the amount of charge is determined by a fractional-order discrete system. In the numerical simulations, it shows that the pinched hysteresis loops are observed, which imply that the proposed memristor satisfies the definition of the memristor. As an application, the fracmemristor sine map is designed, and multistability is observed regarding the initial conditions of both the memristor and system. It provides a potential model for different applications such as cellular neural networks, modulators, sensors, chaotic systems, and programmable digital circuits. [ABSTRACT FROM AUTHOR]

A nonperturbative quantum theory for phonon-assisted photon absorption of conduction band electron in intense laser was developed. By carrying out the calculation in fused silica at wavelengths from ultraviolet to infrared in terawatt intensity laser, we show that the nonperturbation approach can make a uniform description of energy absorption rate at both short wavelengths and long wavelengths on terawatt per centimeter square intensity laser. [ABSTRACT FROM AUTHOR]

We present systematic experimental studies of the temperature dependence of continuous wave and time-resolved photoluminescence spectroscopy in self-assembled InAs/GaAs nanostructures as the shape of quantum structures evolved from dot to ring. The carrier dynamics show strong dependence on the geometrical shape of the nanostructures under investigation. An increase in photoluminescence decay time of the excited and ground states is observed as the shape of nanostructures changed from dot, volcano, to ring. It is attributed to the carrier thermalization between the dark and ground states. The photoluminescence excitation spectra of the quantum rings reveal resonances related to the dark states. A rate equation model is proposed to interpret the observed carrier dynamics. [ABSTRACT FROM AUTHOR]

Oriented Co[sub x]Ni[sub 1-x] nanoparticles were synthesized by sequential implantation of 90 keV Co and Ni ions at room temperature in the near surface of an yttria-stabilized zirconia single crystal. Transmission electron microscopy and a superconducting quantum interference device magnetometer as well as a vibrating sample magnetometer were utilized to characterize the structural and magnetic properties of the implanted layer. Typical nanoparticles range from 3 to 10 nm in diameter, and some elongated precipitates as long as 25 nm were formed by joining the nanoparticles with nanotwins. Hysteresis loops were measured at both 300 and 10 K, and showed coercivity of 100 or 250 Oe, respectively. Magnetization versus temperature in zero-field-cooled and field-cooled fields was measured. No obvious superparamagnetism was detected below 300 K. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Based on the dielectric continuum model, we have studied the electron-optical phonon scattering rates in GaAs/Al[sub χ]Ga[sub 1-χ]As quantum wells with different structure parameters. It was found that the scattering rate of the symmetric interface phonon mode has a stronger dependence on the A1 composition in the barriers than that of the confined mode. The effective phonon energy emitted by hot electrons in GaAs/Al[sub χ]Ga[sub 1-χ]As quantum wells with various Al compositions was estimated and the calculated value agrees with the experimental results qualitatively. For the dependence on the well width, scattering rates of the S+ mode drop considerably as the well width is increased. The dependence of the electron-optical phonon interaction on structure parameters can be clearly explained by the H and G factors defined in the article. [ABSTRACT FROM AUTHOR]

Introduces the existence of a return current when the electron beam propagates through the background plasma. Influence of the return current on the equilibrium and stability properties; Equilibrium state of the beam-plasma configuration; Dispersion relation for the eigenfrequencies of the perturbed configurations.

Milled melt-spun ribbon flake of MRE-Fe-B coated with Zn coating using a vapor transport technique was found to have significant increase in coercivity without degrading the magnetization when the Zn thickness and heat treatment were optimized. Magnetic measurements show that 0.5-1 wt.% Zn coating increases the coercivity about 1 kOe over the initial ribbon powder. After vacuum hot deformation (VHD), the VHD magnet with Zn coating of 0.5 wt.% results in a nearly 3 kOe higher coercivity than an un-coated alloy magnet. An optimized VHD magnet with 0.5 wt.% Zn coating obtains a coercivity of 11.2 kOe and (BH)max of 23.0 MGOe, respectively. SEM and TEM microstructures analysis demonstrates that the Zn coating on the surface of ribbon powder has diffused along the intergranular boundaries after the ribbon powder was annealed at 750 °C for 30 min or was hot deformed at 700-750°C. [ABSTRACT FROM AUTHOR]

Spherical, ferromagnetic FePt nanoparticles with a particle size of 3 nm were prepared by the simultaneous polyol reduction of Fe(acac)3 and Pt(acac)2 in phenyl ether in the presence of oleic acid and oleylamine. The oleic acid ligands can be replaced with 11-mercaptoundecanoic acid, giving particles that can be dispersed in water. Both x-ray diffraction and transmission electron microscopy indicated that FePt particles were not affected by ligands replacement. Dispersions of the FePt particles with 11-mercaptoundecanoic acid ligands and ammonium counter ions gave self-assembled films consisting of highly ordered hexagonal arrays of particles. [ABSTRACT FROM AUTHOR]

High magnetocrystalline anisotropy CoPt particles with an average size of 8 nm were synthesized by the superhydride reduction of CoCl2 and Pt(acac)2 at a high temperature. As-made particles showed a disordered face-centered cubic lattice and were superparamagnetic. Upon heat treatment at temperatures above 600 °C, the particles transformed to the L10 phase, as indicated by the appearance of the superlattice peaks in the x-ray diffraction and high magnetocrystalline anisotropy. The temperature dependence of the coercivity of nanoparticles annealed at 650 °C was measured from 10 to 300 K and analyzed using a Sharrock formula. After annealing at 650 °C, the anisotropy of the nanoparticles was K∼1.7×107 erg/cm3. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report the high temperature reaction of iron acetylacetonate in phenyl ether in the presence of oleic acid and oleylamine that was used to synthesize monodisperse Fe3O4 nanoparticles. X-ray diffraction profile and high-angle annular dark-field images give evidence of self-assembled arrays with nanoparticle size of 4 nm. Magnetization versus temperature in the temperature range 2.5–160 K was measured in zero-field-cooled and field-cooled experiments and a blocking temperature Tb=20 K was obtained. Above Tb the nanoparticles show superparamagnetic behavior and the magnetization versus field for various temperature follows the Langevin function. M-H curves below Tb indicate the ferromagnetic behavior with Hc=60–400 Oe for temperature T=2.5–18.5 K. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We demonstrate a grayscale photolithography technique which uses a thin phase-change film as a photomask to locally control the exposure dose and allows three-dimensional (3D) sculpting photoresist for the manufacture of 3D structures. Unlike traditional photomasks, the transmission of the phase-change material photomask can be set to an arbitrary gray level with submicron lateral resolution, and the mask pattern can be optically reconfigured on demand, by inducing a refractive-index-changing phase-transition with femtosecond laser pulses. We show a spiral phase plate and a phase-type super-oscillatory lens fabricated on Si wafers to demonstrate the range of applications that can be addressed with this technique. [ABSTRACT FROM AUTHOR]

Focuses on the microwave resonance properties of a single-crystal layered structure of yttrium-iron-garnet and gadolinium gallium garnet. Results of the ferromagnetic resonance (FMR) measurements; Reason for the discontinuity in the FMR frequency at the spin-flop condition; Decrease in the magnitude of the resonant signal.

Presents a study that measured the ferrimagnetic resonance linewidths in single-crystals of manganese-doped ferrimagnetic materials. Analysis of the cavity measurements; Correlation between the ferrimagnetic resonance linewidth and resonant magnetic field; Examination of the temperature dependence of the ferrimagnetic resonance.

The thermal and electrical properties including the permittivity spectra in radio frequency region were investigated for copper/yttrium iron garnet (Cu/YIG) composites. Interestingly, the percolation behaviors in electrical and thermal conductivity were obtained due to the formation of copper particles' networks. Beyond the electrical percolation threshold, negative permittivity was observed and plasmon frequency was reduced by several orders of magnitude. With the increase in copper content, the thermal conductivity was gradually increased; meanwhile, the phonon scattering effect and thermal resistance get enhanced, so the rate of increase in thermal conductivity gradually slows down. Hopefully, Cu/YIG composites with tunable electrical and thermal properties have great potentials for electromagnetic interference shielding and electromagnetic wave attenuation. [ABSTRACT FROM AUTHOR]

The electromagnetic properties including ac conductivity, permittivity, and permeability of percolative Fe/Al2O3 composites, which were prepared by in-situ synthesis process, are investigated in the radio frequency range. There is an obvious percolation transition with the increase of iron contents. When iron content is beyond but near the percolation threshold, the negative permittivity and permeability are simultaneously obtained from 631MHz to 1GHz in sample FA30. Further increasing iron content, the Fano-like resonances are observed, and the resonance frequency where the permittivity changes from negative to positive shifts to lower frequency. In addition, the frequency region of negative permittivity and negative permeability are not overlapped any more. Hopefully, the percolative Fe/Al2O3 composites with tunable negative permittivity and negative permeability can be used as electromagnetic wave absorber. [ABSTRACT FROM AUTHOR]

We demonstrate the growth of highly oriented CdSe and ZnTe films at ~300 °C on amorphous substrates such as glass and flexible polyimide using ultrathin tetradymite buffer layers composed of SbxBi2-xTe3 alloys lattice-matched to the film overgrowth. This leads to significant improvement of the crystallinity, roughness, grain size, and pit density of the II-VI overlayer along with enhancement of the optoelectronic properties. For example, photoluminescence emission is observed at ~1.74eV for optimized CdSe films, the same as in a single crystal reference. An in-plane carrier diffusion length of ~500 nm is inferred from transient optical data. The use of tetradymite buffer layers to control II-VI compound deposition on non-crystalline substrates is a promising route for large area optoelectronic applications such as photovoltaic, light-emission, or infrared detector devices. [ABSTRACT FROM AUTHOR]

Using hemisphere-shaped patterned r-plane sapphire substrates, high quality nonpolar (1120) a-plane gallium nitride (GaN) films have been obtained with superior structural characteristics to films grown on conventional (unpatterned) r-plane sapphire. This is evidenced by reduced x-ray rocking curve widths, smaller in-plane crystallographic anisotropy, and smoother surface morphology. Observations by transmission electron microscopy and cathodoluminescence reveal that the defect density is remarkably reduced in regions above the patterned hemispheres. The growth of a-plane GaN on the patterned substrates proceeds first by a relatively fast growth of the film on the flat surface region, and then a gradual lateral overgrowth over the protruding hemispheres, where the direct epitaxial growth is severely retarded. [ABSTRACT FROM AUTHOR]

The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed. [ABSTRACT FROM AUTHOR]

A correlation has been established between the optical and structural properties of blue-light-emitting diode structures grown on free-standing m-plane GaN. A double-peak InGaN quantum well emission at room temperature has been observed with a strong inhomogeneous spatial distribution, which can be associated with the presence of dislocations originating at the InGaN layers. It is argued that the difference in peak energy positions is due to in-plane piezoelectric fields within the dislocated regions. [ABSTRACT FROM AUTHOR]

In this letter, we coupled nanodiamonds (NDs) with gold nanoparticles of different sizes using two complementary DNA sequences. After hybridizing the gold nanoparticles on the NDs, we observed the enhancement of the photoluminescence (PL) signals originating from the nitrogen-vacancy (N-V) center of the ND. The enhancement was attributed to the plasmon field created by the gold nanoparticles. The line shape of the enhanced PL spectra was also affected by the sizes of the attached nanoparticles due to their different resonant plasma frequencies. The signal enhancement can be used as an indexing tool for biosensing applications. [ABSTRACT FROM AUTHOR]

Systems containing interfaces between dissimilar materials can exhibit lower thermal conductivity than their pure constituents, with important implications for thermal management and thermoelectric energy conversion. However, the heat transfer processes at such interfaces, in particular those between organic and inorganic materials, remain for the most part uncharacterized. We use vacuum thermal evaporation to grow archetypal multilayer thin films of copper phthalocyanine (CuPc) and Ag or Al, and measure their thermal conductivity as a function of interface density. We observe large thermal boundary resistance values (7.8×10-8 m2 K/W for CuPc/Ag and 2.0×10-8 m2 K/W for CuPc/Al), attributable to acoustic mismatch, heat carrier mismatch, and weak bonding. [ABSTRACT FROM AUTHOR]

Uniform Ge-nanocrystals (Ge-ncs) embedded in amorphous SiO2 film were formed by using 74Ge+ ion implantation and neutron transmutation doping (NTD) method. Both experimental and theoretical results indicate that the existence of As dopants transmuted from 74Ge by NTD tunes the already stabilized (crystallized) system back to a metastable state and then activates the mass transfer processes during the transition form this metastable state back to the stable (crystallized) state, and hence the nanocrystal size uniformity and higher volume density of Ge-ncs. This method has the potential to open a route in the three-dimensional nanofabrication. [ABSTRACT FROM AUTHOR]

The microstructure of m-plane InGaN epilayers grown on m-plane ZnO has been found to depend significantly on indium composition for the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes, respectively. For indium compositions below ∼0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3[1120] are observed parallel to the [0001] direction. For indium compositions above ∼0.12, generation of basal-plane stacking faults relieve the compressive stress along the [0001] direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain. [ABSTRACT FROM AUTHOR]

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence). [ABSTRACT FROM AUTHOR]

We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime. [ABSTRACT FROM AUTHOR]

We present the detailed experimental results of the magnetic and optical properties of cobalt doped ZnO nanorods, especially the temperature and magnetic field dependence of photoluminescence up to 14 T. The Raman measurements indicate that our Co-doped ZnO nanorods have the same lattice constant as crystalline bulk ZnO. Sharp luminescence peaks centered at around 670 nm were observed at low temperature and their intensity decreased with increasing magnetic field. The luminescence peaks were attributed to d-d transitions in the Ligand field from the doped Co ions. We also observed a diamagnetic shift at a temperature of 1.5 K when the magnetic field was scanned from 0 to 14 T. The exciton radius of the Co-doped ZnO nanorods was deduced from the magnetophotoluminescence results. [ABSTRACT FROM AUTHOR]

In this paper, we devise techniques for immobilizing and allocating a single nanodiamond on the electron beam (e-beam) patterned smart substrate. The properly designed coordination markers on the semiconductor substrate and the high throughput of the confocal microscope provide us with a convenient tool to single out a nanodiamond with a size less than 100 nm and to study Raman spectroscopy. We observe a redshift in energy and broadening in the linewidth of the sp3 bonding Raman peak when the size of the diamond is decreased from 90 to 35 nm. The observed shifts and linewidth broadening arise from the phonon-confinement effects and are in good agreement with calculations reported by [Ager et al. Phys. Rev. B 43, 6491 (1991)] and [Yoshikawa et al. Appl. Phys. Lett. 62, 3114 (1993)]. [ABSTRACT FROM AUTHOR]

Transparent MgAl2O4 spinel nanoceramics have been sintered at relatively low-temperature (500–700 °C) under high pressure (2–5 GPa) using a hydrostatic press with high-temperature-calcined nanopowders. The morphology, nanostructure, optical property, and density of ceramics were analyzed by scanning electron microscopy, transmission electron microscopy, UV-VIS-IR transmission spectrum, and Archimedes draining method. The average grain size (<100 nm for all samples sintered) depends on the sintering pressure and temperature. The nanoceramics are highly transparent even though their relative densities are all less than 99%, due to the low or negligible light scattering from the nanosized grains and pores. [ABSTRACT FROM AUTHOR]

We report investigations on carrier capture and relaxation processes in undoped and modulation-doped InAs/GaAs self-assembled quantum dots (QDs) by using time-resolved spectroscopy technique with a time resolution of ∼200 fs. We find that carrier capture and relaxation in the ground state of the charged QD are faster compared to the undoped dots even at an excitation level as low as 1×1010 cm-2. It is attributed to the triggering of the vibrating polarization field induced by the presence of cold carriers in the doped dots. The rate of an electron been captured by a positively charged QD is also calculated based on our proposed model. [ABSTRACT FROM AUTHOR]

A Co-doped ZnO nanoneedle array with room-temperature ferromagnetic properties was successfully fabricated by pulsed laser deposition (PLD) method. Detailed nanostructures were studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). High resolution TEM images and selected area electron diffraction (SAD) patterns showed nanoneedles grew along c-axis of ZnO with a preferential growth perpendicular to Si (100) substrate, which is also confirmed by XRD. Uneven surface and stacking faults along the nanoneedles were observed, which implies lattice distortion due to the Co doping. Electron energy loss spectroscopy (EELS) analysis of different positions along the growth direction of nanoneedles shows homogeneous distribution of the Co dopant. No segregated clusters of impurity phase were detected by TEM. Superconducting quantum interference device (SQUID) magnetometer measurements show room temperature ferromagnetic ordering, which is attributed to the Co substitution for Zn in the ZnO nanoneedle. [ABSTRACT FROM AUTHOR]

White-colored materials synthesized by a thermal annealing of milled GaN powders at 930 °C in a nitrogen atmosphere were identified to be monoclinic β-Ga[sub 2]O[sub 3] nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length.© 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A liquid phase processing method for the fabrication of bulk YBa2Cu3Ox superconductors with large current carrying capacity has been developed. Slow cooling through the peritectic transformation (1030–980 °C) has been shown to control the microstructure of these superconductors. A cooling rate of 1 °C/h in this temperature range has yielded a microstructure with long plate type, thick grains oriented over a wide area. Current density up to 18 500 A/cm2 has been obtained by continuous direct current measurements and in excess of 62 000 A/cm2 with pulse current of 10 ms duration and 75 000 A/cm2 using 1 ms pulse. The strong magnetic field dependence observed in sintered bulk 1-2-3 superconductors is also minimized to a large extent where a current density in excess of 37 000 A/cm2 is obtained in a field of 6000 G. [ABSTRACT FROM AUTHOR]

Examines the presence of GaMn icosahedral particles with quasicrystalline order in manganese implanted and rapidly annealed gallium arsenide. Orientation relationship between submicron quasiparticles; Indication of the quasicrystal ferromagnetic nature; Importance of mechanical conditions in crystal growth.

This research aims to investigate the mechanisms of multistability in chaotic maps. The study commences by examining the fundamental principles governing the development of homogeneous multistability using a basic one-dimensional chain-climbing map. Findings suggest that the phase space can be segmented into distinct uniform mediums where particles exhibit consistent movement. As critical parameter values are reached, channels emerge between these mediums, resulting in deterministic chaotic diffusion. Additionally, the study delves into the topic of introducing heterogeneous factors on the formation of heterogeneous multistability in the one-dimensional map. A thorough examination of phenomena such as multistate intermittency highlights the intimate connection between specific phase transition occurrences and channel formation. Finally, by analyzing two instances-a memristive chaotic map and a hyperchaotic map-the underlying factors contributing to the emergence of multistability are scrutinized. This study offers an alternative perspective for verifying the fundamental principles of homogenous and heterogeneous multistability in complex high-dimensional chaotic maps., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

Gallium oxide is a newly emerged ultrawide bandgap (4.9 eV) semiconductor that is suitable as a combined electronics and radiation detection platform. We have experimentally demonstrated fast neutron and gamma-ray scintillation from Czochralski-grown β-Ga2O3 in a recent series (October 2023) of experiments at the unmoderated pulsed neutron spallation source located at the Los Alamos Neutron Science Center. Using the neutron time-of-flight (TOF) technique and a fast-gated intensified CCD camera, we observed energy-dependent neutron scintillation for neutron energies ranging from 1 to 400 MeV, including the 14.1 MeV neutron energy relevant to D-T fusion. Neutron flux is quantified and calibrated by cascading the scintillator after the fission chamber, enabling a detailed analysis of temporal and energy-dependent characteristics of the scintillation events. A pronounced scintillation signal from the spallation gamma flash with a temporal full width of half maximum of ∼4 ns is indicative of the material's rapid response. Neutron energy dependent scintillation is observed using the TOF method at a 22.6-m distance from the neutron source. These results highlight the possibility of developing a Ga2O3 based fusion neutron diagnostic platform integrated with both scintillation and electronics functions on the integrated chip scale., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

Chiral perovskite materials are being extensively studied as one of the most promising candidates for circularly polarized luminescence (CPL)-related applications. Balancing chirality and photoluminescence (PL) properties is of great importance for enhancing the value of the dissymmetry factor (glum), and a higher glum value indicates better CPL. Chiral perovskite/quantum dot (QD) composites emerge as an effective strategy for overcoming the dilemma that achieving strong chirality and PL in chiral perovskite while at the same time achieving high glum in this composite is very crucial. Here, we choose diphenyl sulfoxide (DPSO) as an additive in the precursor solution of chiral perovskite to regulate the lattice distortion. How structural variation affects the chiral optoelectronic properties of the chiral perovskite has been further investigated. We find that chiral perovskite/CdSe-ZnS QD composites with strong CPL have been achieved, and the calculated maximum |glum| of the composites increased over one order of magnitude after solvent-additive modulation (1.55 × 10-3 for R-DMF/QDs, 1.58 × 10-2 for R-NMP-DPSO/QDs, -2.63 × 10-3 for S-DMF/QDs, and -2.65 × 10-2 for S-NMP-DPSO/QDs), even at room temperature. Our findings suggest that solvent-additive modulation can effectively regulate the lattice distortion of chiral perovskite, enhancing the value of glum for chiral perovskite/CdSe-ZnS QD composites., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

The interplay between orientation transition and chiral self-assemblies of para-terphenyl (P3P) molecules on the Cd(0001) surface has been investigated using low temperature scanning tunneling microscopy and density functional theory calculations. Three distinct molecular orientations have been discerned from the self-assembled thin films of P3P. At the low coverage, flat-lying molecules appear in the homochiral domains with the incommensurate registry to the substrate. With the coverage increasing, the incoming molecules are incorporated into the first layer with edge-on orientation and form the self-assembled zigzag chains. The alternative arrangement of zigzag chains with opposite chirality leads to the formation of a c(4 × 2) superstructure, in which the tilted molecules exhibit orientational frustration and fuzzy noises. The analysis of the tunneling spectra reveals that the electronic structure of P3P layers is contingent upon the hybridization between the electronic states of P3P molecules and the Cd(0001) surface. These results provide important insights into the interplay between orientational transition and chiral assembly of P3P molecules on metal substrates., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

By employing the numerically accurate multiple Davydov Ansatz (mDA) formalism in combination with the thermo-field dynamics (TFD) representation of quantum mechanics, we systematically explore the influence of three parameters-temperature, photonic-mode detuning, and qubit-phonon coupling-on population dynamics and absorption spectra of the Holstein-Tavis-Cummings (HTC) model. It is found that elevated qubit-phonon couplings and/or temperatures have a similar impact on all dynamic observables: they suppress the amplitudes of Rabi oscillations in photonic populations as well as broaden the peaks and decrease their intensities in the absorption spectra. Our results unequivocally demonstrate that the HTC dynamics is very sensitive to the concerted variation of the three aforementioned parameters, and this finding can be used for fine-tuning polaritonic transport. The developed mDA-TFD methodology can be efficiently applied for modeling, predicting, optimizing, and comprehensively understanding dynamic and spectroscopic responses of actual molecular systems in microcavities., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

This study leverages two-pulse femtosecond stimulated Raman spectroscopy (2FSRS) to characterize molecular systems with avoided crossings (ACs) and conical intersections (CIs) in their low-lying excited electronic states. By simulating 2FSRS spectra of microscopically inspired ACs and CIs models, we demonstrate that 2FSRS not only delivers valuable information on the molecular parameters characterizing ACs and CIs but also helps distinguish between these two systems., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)