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We report the crystal structure and magnetic properties of Al1-xNixN films with 0 ≤ x ≤ 0.032 deposited on Si (100) substrates by radio frequency reactive sputtering. X-ray diffractometry, x-ray photoemission spectroscopy, and x-ray absorption fine structure analysis clearly showed that Ni atoms were successfully incorporated into AlN, while the crystal structure of the films was maintained. All the doped samples exhibited ferromagnetism both at 5 K and 300 K. The saturation magnetizations (Ms) and coercive fields (Hc) tended to decrease as Ni concentration increased from 0.019 to 0.032, the maximum Ms obtained at 5 K and 300 K were about 0.025 and 0.014 emu/g, respectively, and the corresponding Hc were 208 and 60 Oe. Temperature dependence of remanent magnetization showed that the ferromagnetic transition temperature was beyond 300 K. [ABSTRACT FROM AUTHOR]

Dielectric barrier discharges (DBDs) provide a promising technology of generating non-equilibrium cold plasmas in atmospheric pressure gases. For both application-focused and fundamental studies, it is important to explore the strategy and the mechanism for enabling effective independent tuning of key plasma parameters in a DBD system. In this paper, we report numerical studies of effects of dual-frequency excitation on atmospheric DBDs, and modulation as well as separate tuning mechanism, with emphasis on dual-frequency coupling to the key plasma parameters and discharge evolution. With an appropriately applied low frequency to the original high frequency, the numerical calculation demonstrates that a strong nonlinear coupling between two frequencies governs the process of ionization and energy deposition into plasma, and thus raises the electron density significantly (e.g., three times in this case) in comparisons with a single frequency driven DBD system. Nevertheless, the gas temperature, which is mainly determined by the high frequency discharge, barely changes. This method then enables a possible approach of controlling both averaged electron density and gas temperature independently. [ABSTRACT FROM AUTHOR]

The effect of the symmetries in the terahertz (THz) field distribution and the field-effect channel on THz photoresponse is examined. Resonant excitation of cavity plasmon modes and nonresonant self-mixing of THz waves are demonstrated in a GaN/AlGaN two-dimensional electron gas with symmetrically designed nanogates, antennas, and filters. We found that the self-mixing signal can be effectively suppressed by the symmetric design and the resonant response benefits from the residual asymmetry. The findings suggest that a single detector may provide both high sensitivity from the self-mixing mechanism and spectral resolution from the resonant response by optimizing the degree of geometrical and/or electronic symmetries. [ABSTRACT FROM AUTHOR]

Using only optical lithography, we have fabricated a GaN/AlGaN high-electron mobility transistor with distinctive source and drain antennas electrically isolated from the electron channel. Working at room temperature, it efficiently detects terahertz radiation via self-mixing, with a responsivity (3.6 kV/W) exceptionally high for a III-V device and with a noise [formula] just above the thermal limit. Performance improves at 77 K. While the device itself is micrometer-sized, our modeling indicates the asymmetric antennas induce a rather localized (<200 nm) region of strong self-mixing. Thus, a nanometer-scale active region is achieved by design and without recourse to electron-beam lithography. [ABSTRACT FROM AUTHOR]

This letter focuses on the fabrication and characterization of a terahertz detector integrated with a group of low pass filters and resonant antennas. The detector operates as a self-mixer on GaN/AlGaN high electron mobility transistor (HEMT). At room temperature, a strong dc photocurrent is produced with the aid of the antennas and filters. The responsivity of our HEMT device is estimated to be 53 mA/W and a noise equivalent power of [formula] can be achieved at 300 K. In addition, the sensor properties of a similar HEMT detector without filter are tested as a comparison. [ABSTRACT FROM AUTHOR]

Zr48.5Cu46.5Al5 bulk metallic glass matrix composites with diameters of 3 and 4 mm were produced through water-cooled copper mold casting. Micrometer-sized bcc based B2 structured CuZr phase containing martensite plate, together with some densely distributed nanocrystalline Zr2Cu and plate-like Cu10Zr7 compound, was found embedded in a glassy matrix. The microstructure formation strongly depends on the composition and cooling rate. Room temperature compression tests reveal significant strain hardening and plastic strains of 7.7% and 6.4% before failure are obtained for the 3-mm- and 4-mm-diam samples, respectively. The formation of the martensite phase is proposed to contribute to the strain hardening and plastic deformation of the materials. [ABSTRACT FROM AUTHOR]

In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we report a quasistatic self-mixing model taking into account the localized terahertz fields and its verification by comparing the simulated results with the experimental data in a two-dimensional space of the gate voltage and the drain/source bias. The model well describes the detector characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The existence of strongly localized self-mixing in such detectors is confirmed. [ABSTRACT FROM AUTHOR]