1. Electronic transitions and hybrid resonance in InAsSb films by reflectance spectra.
- Author
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Deng, H. Y., Wang, Q. W., He, J. Y., Sun, C. H., Hu, S. H., Chen, X., and Dai, N.
- Subjects
SEMICONDUCTOR films ,DIELECTRIC films ,ELECTRONIC structure ,INDIUM compounds ,RESONANCE ,SPECTRAL reflectance ,ELLIPSOMETRY ,CRITICAL point (Thermodynamics) - Abstract
Electronic properties of InAs
1-x Sbx films with x up to 0.09 have been investigated by reflectance spectra in 1.5-5 eV energy range at room temperature. The real and imaginary parts of the dielectric function were derived by Kramers-Kronig analysis on the reflectance spectra, which show satisfactory agreement with the spectroscopic ellipsometry data. The E1 ′ and E1 ′ +Δ1 ′ peaks are attributed to electronic interband transitions at the E1 and E1 +Δ1 critical points, respectively. The prominent E2 ′ peaks, which exhibit high reflectivity and large blueshift, are found to be contributed by hybrid resonance due to the cooperative behavior of both E2 -state electrons and plasmons. [ABSTRACT FROM AUTHOR]- Published
- 2010
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