1. Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence.
- Author
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Semler, Matthew R., Hoey, Justin M., Srinivasan Guruvenket, Gette, Cody R., Swenson, Orven F., and Hobbie, Erik K.
- Subjects
AMORPHOUS silicon ,SILICON films ,LASERS ,CRYSTALLINITY ,REFLECTANCE spectroscopy ,RAMAN spectroscopy ,X-ray diffraction - Abstract
We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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