Search

Growth stress in tungsten carbide-diamond-like carbon coatings, sputter deposited in a reactive argon/acetylene plasma, has been studied as a function of the acetylene partial pressure. Stress and microstructure have been investigated by wafer curvature and transmission electron microscopy (TEM) whereas composition and energy distribution functions of positive ions were obtained by electron probe microanalyzer, elastic recoil detection analysis, and mass-energy analyzer (MEA). It has been observed that the compressive stress decreases with increasing acetylene partial pressure, showing an abrupt change from -5.0 to -1.6 GPa at an acetylene partial pressure of 0.012 Pa. TEM micrographs show that by increasing the acetylene partial pressure in the plasma from 0 to 0.012 Pa, the microstructure of the coating changes from polycrystalline to amorphous. MEA results show that the most probable energy of positive ions bombarding the substrate during deposition in pure argon and argon/acetylene atmosphere is the same. Based on the results, it is concluded that the huge variation in the compressive stress at low acetylene partial pressures is due to a change in the microstructure of the coating from polycrystalline to amorphous and not to the energy of positive ions bombarding the film. [ABSTRACT FROM AUTHOR]

A method is presented to determine the photoelectron surface core-level shift (SCLS) of 3d transition metals using x-ray photoelectron spectroscopy. The experimental difficulties arising from the relatively large broadening of photoemission lines in the 3d transition series can be overcome by the analysis of the angular dependence of photoemission spectra. The proposed method has been demonstrated using well-defined single-crystal surfaces of copper. The observed values of the SCLS for copper are compared with those predicted by both ab initio calculations and a macroscopic atom model. The experimental determination of SCLSs opens alternative routes for collecting thermochemical data for surfaces/interfaces. [ABSTRACT FROM AUTHOR]

We study the stability in time of the current-voltage characteristics of organic thin-film devices on glass substrates. We find for poly(3-hexylthiophene) and for pentacene that the resistance of the devices gradually changes under the application of an electrical bias depending on the sodium content of the glass substrates used in the experiment. For devices on a very common type of glass (with a Na[sub 2]O content of about 6%) and on sodalime glass ( 14% Na[sub 2]O) substrates, the prolonged application of a voltage bias results in a substantial decrease (up to two orders of magnitude) of the bulk and contact resistances, whereas for sodium-free glass substrates the gradual changes in current-voltage characteristics are much smaller. A systematic study of the electrical behavior complemented by chemical analysis shows that the instabilities observed are due to Na[sup +] ions diffusing from the substrate into the organic film, and moving inside the organic material as a result of the applied electric field. Our results show in detail how ion motion in organic materials results in substantial hysteresis and device instabilities. [ABSTRACT FROM AUTHOR]

The growth kinetics and mechanisms of thin aluminum-oxide films formed by the dry, thermal oxidation of a bare Al(431) substrate at a partial oxygen pressure of 1.33 × 10[sup -4] Pa in the temperature range of 373-773 K were studied using x-ray photoelectron spectroscopy. The initial oxidation of the bare Al substrate proceeds by an island-by-layer growth mechanism, involving the lateral diffusion over the bare Al substrate surface of mobile oxygen species. At low temperatures (T ≤ 573 K), an amorphous oxide film develops that attains a limiting (uniform) thickness. At high temperatures (T>573 K), growth is not impeded at a limiting thickness. Kinetic analysis established the occurrences of two different oxide-film growth regimes: an initial regime of very fast oxide-film growth and a second, much slower oxidation stage that is observed only at T > 573 K. These results could be discussed in terms of electric-field controlled, interstitial, outward transport of Al cations through a close packing of O anions in the amorphous films, and inward diffusion of O along grain boundaries in the crystalline films, respectively. For the electric-field controlled Al cation motion, a value of 2.6 eV was determined for the rate-limiting energy barrier, which is located at the metal/oxide interface. This corresponds with a Mott potential of -1.6 V. [ABSTRACT FROM AUTHOR]

Focuses on a study with which analyzed the annealing-induced variations in compositions, microstructure, resistivity and internal stresses of amorphous molybdenum/silicon. Specimen preparation; Composition and architecture of the molybdenum silicate layers; Crystalline phase formation.

Focuses on a study which grew amorphous silicon layers by krypton plasma sputter deposition. Experimental setup and procedure; Model for ion assisted deposition; Background on Mössbauer spectroscopy.

An isothermal sensor is developed to quantify the atomic hydrogen flux on a surface, which can be located at any distance from the molecular hydrogen cracking unit. This flux is determined from the measured heat effect due to recombination of atomic hydrogen at the sensor surface. The temperature of the sensor was kept constant at 350°C to keep the heat losses constant during the measurement. Other heat flows due to radiative, conductive, and convective phenomena were quantified with targeted measurements. The design of the sensor allows ample area for the atomic hydrogen recombination reaction; thus enabling the flux values to be determined with high accuracy (errors were between ±8.3×1015 and ±3.3×1016atcm-2s-1). The atomic hydrogen flux, generated with a commercial atomic hydrogen source was measured as a function of the filament temperature in the range of 1400-1950°C and H2 gas flow in the range of 7.44×10-6 to 7.44×10-5mol/s (10-100 sccm). These measurements showed that the atomic hydrogen flux increases with both filament temperature and H2 flux. [ABSTRACT FROM AUTHOR]