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We have developed a new atomic force microscope (AFM), with a z scanner independent of the xy scanner. Unlike conventional AFM systems, our xy scanner moves only the sample in the xy plane, while the z scanner controls the AFM probe along the z axis. The xy scanner is a single module parallel-kinematics flexure stage that guarantees high orthogonality and minimum out-of-plane motion. The z scanner is a one-dimensional flexure stage with negligible out-of-axis motion. Separating the z scanner from the xy scanner practically eliminates the x–z cross coupling problem inherent in conventional AFMs. Furthermore, the z servo response is no longer limited by the xy scanner characteristics, allowing us to make full use of our high performance z scanner. Our system uses the laser beam bounce detection method, and only the cantilever and the photodetector are mounted on the z scanner to realize a lightweight probing unit. We have devised a unique design such that the photodetector signal measures only the cantilever deflection and not the z-scanner motion. Our new AFM provides fast z servo response and high scan accuracy. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Discusses the development of dynamic contact mode electrostatic force microscopy (DC-EFM) as an operation mode of scanning probe microscope (SPM). Complete separation of the topographic effect from other electrostatic force effect; Use of DC-EFM either as a force microscopy for surface hardness or as a potentiometry for surface potential distribution.

A thermally evaporated molybdenum oxide (MoO3) film was used as a window layer of a hydrogenated amorphous silicon (a-Si:H) solar cell instead of the conventional p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) film. The short circuit current density (JSC) and fill factor were increased due to the wide optical band gap and high conductivity of the MoO3 film. As a result, the conversion efficiency of the fabricated MoO3 solar cell was increased to 6.21% compared to the typical a-Si:H solar cell (5.97%). [ABSTRACT FROM AUTHOR]

This letter presents approaches for assembly and electrical interconnection of micro/nanoscale devices into functional systems with useful characteristics. Transfer printing techniques provide deterministic control over an assembly process that occurs prior to or simultaneously with a soft lithographic molding step that defines relief features in a receiving polymer. Filling these features with conducting materials that are processable in the form of liquids or pastes yields integrated interconnects and contacts aligned to the devices. Studies of the underlying aspects and application to representative systems in photovoltaics and solid state lighting indicators provide insights into the process and its practical use. [ABSTRACT FROM AUTHOR]

Studies charged trapping induced by hot carriers in a metal-oxide-semiconductor capacitor using a scanning capacitance microscope. Trapped charge generated by hot carriers injected from silicon substrate into silicon dioxide; Shifts in capacitance-voltage curves due to the locally trapped charge.

The structural evolution during heteroepitaxial growth of ZnO/sapphire(001) by radio-frequency magnetron sputtering has been studied using real-time synchrotron x-ray scattering. The two-dimensional (2D) ZnO(002) layers grown in the initial stage are highly strained and well aligned to the substrate having a mosaic distribution of 0.01° full width at half maximum (FWHM), in sharp contrast to the reported transition 2D layers grown by molecular-beam epitaxy. With increasing film thickness, the lattice strain is relieved and the poorly aligned (1.25° FWHM) three-dimensional (3D) islands are nucleated on the 2D layers. We attribute the 2D-3D transition to the release of the strain energy stored in the film due to the film/substrate lattice mismatch. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]