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We investigate the phase dynamics of moderately damped NbN/AlN/NbN Josephson junctions and we present experimental results on detailed aspects of phase diffusion processes. We measure both single escape and multiple escape and retrapping events obtaining a crossover temperature T* from Kramers to phase diffusion switching. We observe a clear dependence of the crossover temperature T* by the bias current ramp rate, while the damping factor Q remains the same. The measured effect is in strong agreement with theoretical predictions reported by Fenton and Warburton. [ABSTRACT FROM AUTHOR]

We report a systematic study of the transport properties of high critical temperature superconductor (HTS) biepitaxial Josephson junctions in the submicron range. Junction performances point to more uniform and reproducible devices and to better control of d-wave intrinsic properties. Outcomes promote novel insights into the transport mechanisms across grain boundaries and encourage further developments in the control of dissipation in HTS devices. The application of nanotechnology to HTS could be an additional tool to properly engineer the junction properties to match specific circuit design also in view of the integration into hybrid quantum circuits. [ABSTRACT FROM AUTHOR]

We demonstrate that a large area Josephson junction oscillating in the fluxon oscillator mode can be synchronized to other large junctions and simultaneously pump, by emitted radiation, a small area junction. We study the synchronization of the oscillations of the long junctions as a function of relevant experimental parameters such as bias current and stripline coupling characteristics. Experimental results obtained on coupled series arrays of Josephson junctions designed on the basis of our calculations are presented. We have fabricated coupled arrays containing each up to 1500 junctions in order to estimate the usefulness of our calculations for voltage standard devices. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents a study which reported a simplified model of series-biased arrays of long Josephson junction fluxon oscillators. Background of studies on long Josephson junction oscillators; Overview of the model used in describing the array; Characteristics of the partial differential equation scheme used to stimulate the model.

The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions. [ABSTRACT FROM AUTHOR]

The moderately damped regime in Josephson junctions (JJ) is quite common in devices characterized by low critical currents and, therefore, by low Josephson energies. Measurements of the switching current distribution (SCD) are a direct way of determining the phase dynamics in the nontrivial case of moderate damping, which is becoming more common with advances in nanopatterning superconductors and in materials science for fabricating hybrid systems. We report measurements of SCDs, in both the thermal and quantum regimes for moderately damped YBaCuO grain boundary biepitaxial JJs. A direct transition from a phase diffusion regime to macroscopic quantum tunnelling occurs at about 130 mK. The crossover to the quantum regime is determined by the magnetic field and the phase dynamics can be described by a fully consistent set of junction parameters obtained by numerical simulation. [ABSTRACT FROM AUTHOR]

The Josephson effect is a privileged access to the macroscopic quantum nature of superconductors. We review some ideas and experimental techniques on macroscopic quantum decay phenomena occurring in Josephson structures. The attention is mainly addressed to intermediate levels of dissipation which characterize a large majority of low critical current Josephson devices and are therefore an avoidable consequence of nanotechnology applied more and more to Josephson devices. Phase diffusion phenomena take over thermal activation in some temperature ranges also affecting the transition to macroscopic quantum tunneling, enriching the phase diagram mostly defined by the Josephson energy, the temperature and the level of dissipation. [ABSTRACT FROM AUTHOR]

The Josephson effect is a probe with unparalleled capabilities for the study of a variety of macroscopic quantum phenomena. This is a survey of important achievements and challenging trends, in particular macroscopic quantum tunneling and energy level quantization. We focus on high-TC superconducting structures and recent research on nanostructures. [ABSTRACT FROM AUTHOR]

Pulse-activated transitions from the metastable to the running state and vice versa have been observed in a stacked double tunnel Nb-based Josephson system. Experimental results are compared with numerical simulations based on the Sine–Gordon model of the stacked junctions by injecting pulses with variable amplitude in one of the junctions of the stack, and observing the voltage response of the other junction. Both experimental and numerical results show the possibility to induce both direct and back-switching transitions from the metastable to the running state simply by changing the amplitude of the electronic pulses injected across the stack device. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]