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Organic thin-film transistors were fabricated by direct patterning of solution-processable semiconductors consisting of either poly(9,9[sup ′]-dioctyl-fluorene-co-bithiophene) or a regioregular poly(thiophene). Acoustic ink-jet printing was used to deposit the polymeric semiconductor onto patterned metal source-drain contacts. Printed and spin coated transistors performed identically. The regioregular poly(thiophene) exhibited a mobility of 0.1 cm[sup 2] V[sup –1] s[sup -1], on-off current ratios of ∼10[sup 6] and low threshold voltage. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]