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Silicon dioxide films were grown by low-temperature anneal in O2 on substrates of CoSi2 lines or disks. The leakage current through SiO2 films grown on CoSi2 lines have a strong dependence on the O2 anneal temperature, while those grown on CoSi2 disks have a weak dependence on anneal temperature. This difference is due to the shape of the oxide grown on the CoSi2. Oxide films were found to grow in a convex shape on CoSi2 disks, being much thicker in the middle of the disk than on the edge. Oxide films grown on CoSi2 lines had relatively uniform thickness across the width of the line. [ABSTRACT FROM AUTHOR]