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Monte-Carlo radiation transport simulations are used to evaluate the implications of track structure on the response of microelectronics to energy deposition from ionizing radiation events. Results show that average track structure models cannot fully account for effects on microelectronics devices from energy deposition by δ-rays. Additionally, results indicate that δ-ray energy deposition events are capable of depositing up to 10 keV of energy within a 50 nm cube at radial distances greater than 10 μm from an ionizing particle event. [ABSTRACT FROM AUTHOR]