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A detailed study of the electrical properties of planar AlGaN/GaN Schottky diodes is presented, the focus being on the role of the two dimensional electron gas (2DEG) depletion and the diodes non-idealities in different voltage regimes. The 2DEG depletion behavior is inferred from the analysis of capacitance and current measurements with transition from vertical to lateral diode operation occurring at Vpinch-off=4V. In particular, the sub-micrometer depletion width, laterally extending from the edge of the Schottky contact under high reverse voltages, is evaluated on the basis of a simple fringe capacitance model. Current transport mechanisms are discussed, investigating the interrelation between 2DEG, Poole-Frenkel effect, and defects. With regard to defects, the role of dislocations in the AlGaN/GaN diode non-idealities, usually interpreted in terms of Schottky barrier inhomogeneities, is critically addressed. Photocurrent spatial mapping under high reverse voltage points out the not uniform electric field distribution around the Schottky contact and highlights the presence of local photo-conductive paths, likely associated with the dislocations near the edge of the Schottky contact. [ABSTRACT FROM AUTHOR]

Energy harvesting at low frequency is a challenge for microelectromechanical systems. In this work we present a piezoelectric vibration energy harvester based on freestanding molybdenum (Mo) and aluminum nitride (AlN) ring-microelectromechanical-system (RMEMS) resonators. The freestanding ring layout has high energy efficiency due to the additional torsional modes which are absent in planar cantilevers systems. The realized RMEMS prototypes show very low resonance frequencies without adding proof masses, providing the record high power density of 30.20 μW mm-3 at 64 Hz with an acceleration of 2g. The power density refers to the volume of the vibrating RMEMS layout. [ABSTRACT FROM AUTHOR]

Examines the nonlinear absorption and gain in indium gallium arsenide/gallium arsenide quantum wells. Use of transient transmission spectroscopy as basis for nonlinearity; Observation of the excitonic resonance bleaching and free carrier gains; Analysis of nonlinearities through Bethe-Salpeter equation.