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This paper examines selecting the most suitable materials for Sensible Energy Storage (SES) in Thermal Energy Storage (TES) systems. We focus on two key materials: graphite and magnesia (magnesium oxide). Graphite, with its remarkable ability to withstand high temperatures of up to 3500 degrees Celsius, is chosen as the SES material despite its relatively higher cost. Meanwhile, magnesia serves as a crucial thermal insulator for the SES material, enhancing heat storage effectiveness, particularly in scenarios where high-temperature heat storage materials are subject to heat exchange processes. To aid in material selection, Computational Energy Storage (CES) software systems and experimental calculations are proposed for their comprehensive analysis and evaluation of SES materials. Through these methods, optimal materials can be identified, ensuring efficient and reliable Sensible Energy Storage in Thermal Energy Storage systems. [ABSTRACT FROM AUTHOR]

Electro-magneto-hydrodynamic flow of non-Newtonian fluid (blood) suspended with magnetic particles (erythrocytes) through tapered stenosed inclined artery is explored in this study. The fluid is influenced by a pulsatile constant pressure gradient and an inclined magnetic field. Governing partial differential momentum equations are solved and the fluid and particles axial velocity formula is derived in the analytical form. Further, closed form expressions are obtained for wall shear stress, flow resistance and volumetric flow rate. Graphical analysis of various physiological dynamics against embedded parameters is developed by MATLAB coding. Effects of pertinent parameters are examined and results are discussed. It is noted that both fluid and particle velocity profiles are reduced with increasing values of Hartmann number. In contrast, the electrokinetic number increases the velocities of the fluid and particle. Thus, the fluidic flow can be regulated by applying strong and adequate electromagnetic field which plays a vital role in diagnosing cardio vascular diseases and the respective medical care. [ABSTRACT FROM AUTHOR]

The effect of polyvinylidene fluoride (PVDF) polymer interlayer on the rectifying junction parameters of Au/n-InP Schottky diode have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that Au/PVDF/n-InP structure exhibits a good rectifying behavior. The calculated barrier heights (BHs) are 0.73 eV (I-V), 0.88 eV (C-V) for Au/PVDF/n-InP Schottky diode, respectively. The values of the barrier height, ideality factors and series resistance estimated by I-V and Cheung's methods are compared. The discrepancy between barrier heights estimated from I-V and C-V methods is also explained. [ABSTRACT FROM AUTHOR]

Cr/Au/n-InP Schottky structures are fabricated and their electrical characteristics are investigated at different annealing temperatures. As-deposited Cr/Au/n-InP Schottky diode exhibits a barrier height of 0.51 eV (I-V) and 0.64 eV (C-V), which increases to 0.63 eV (I-V) and 0.75 eV (C-V) after annealing at 100 °C. A maximum barrier height of 0.71 eV (I-V) and 0.81 eV (C-V) is achieved for the Cr/Au Schottky contacts after annealing at 200 °C. Further, it is observed that the Schottky barrier height slightly decreases upon annealing at temperature of 300 °C and the obtained values are 0.58 eV (I-V), 0.69 eV (C-V). The reverse-bias leakage current mechanism of Cr/Au/n-InP Schottky barrier diode is investigated. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. [ABSTRACT FROM AUTHOR]

Effects of annealing on electrical properties of Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V) measurements. The Schottky barrier height (SBH) is found to be 0.61 eV for as-deposited Ir/Ru Schottky contacts. For the contacts annealed at 200 and 300°C, the SBH slightly increases and then slightly decreases after annealing at 400°C and 500°C. The series resistance (RS) can be determined using Cheung's method. Besides, the energy distributions of interface state densities are determined by using the Terman's method. It is noted that the electrical properties of Ir/Ru Schottky contacts are improved after annealing at 300°C. Based on these results, it is clear that Ir/Ru Schottky contact is an attractive metallization scheme for the fabrication of InGaN-based device applications. [ABSTRACT FROM AUTHOR]