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Presents a study on the diffusivity of excess carriers in indium gallium nitride multiple quantum wells by near-field optical imaging of photoluminescence profiles. Experimental procedure; Results and discussion; Conclusion.

We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p[sup ++]/n[sup ++] InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Describes a method for fabricating a vertical cavity light emitting structure for nitride semiconductors. Separation of an InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate and its enclosure; Cavity Q factor exceeding 600 demonstrated in initial experiments.