1. Molecular adsorption and strain-induced ferromagnetic semiconductor-metal transition in half-hydrogenated germanene.
- Author
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Wang, X., Liu, G., Liu, R. F., Luo, W. W., Sun, B. Z., Lei, X. L., Ouyang, C. Y., and Xu, B.
- Subjects
TETRACYANOQUINODIMETHANE ,FERROMAGNETIC materials ,STRAINS & stresses (Mechanics) ,ELECTROPHILES ,CHARGE transfer ,DEFORMATIONS (Mechanics) ,FERMI level - Abstract
Very recently, half-hydrogenated germanene has been achieved in an experiment. In this paper, we investigate the effects of tetracyanoquinodimethane (TCNQ) molecular adsorption and strain on the electronic properties of half-hydrogenated germanene through first-principles. As an electron-acceptor molecule, TCNQ is exploited to non-covalently functionalize the half-hydrogenated germanene. However, this physical adsorption induces a ferromagnetic semiconductor–metal transition in half-hydrogenated germanene due to charge transfer from the substrate to the TCNQ molecule. More importantly, the superstructure of half-hydrogenated germanene/TCNQ is extremely sensitive to biaxial tensile strain. Under the biaxial tensile strain of 0.25%, the ferromagnetic semiconductor–metal transition induced by molecular adsorption can surprisingly be overturned. Meanwhile, a strong p-type doping is exhibited. Remarkably, it would return from a ferromagnetic semiconductor to a metal again when the biaxial tensile strain increases to 1.5%. Our analysis based on the structural and electronic properties of half-hydrogenated germanene/TCNQ indicates that such metal–semiconductor–metal transition in half-hydrogenated germanene/TCNQ under biaxial tensile strain may originate from the strong local deformation, resulting in the energy of the valence band maximum decreasing below or increasing above the Fermi level. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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