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So far, excitonic luminescence in metal halide (MH) has extensively been studied by many workers, with the interest not only in physics of excitons but also in its possible application in optoelectronics. In the actual MHs, however, excitonic luminescence is so weak that it is beyond the scope of applications. Here we report the rediscovery that inherent excitonic luminescence in MH is dominated by a dramatically high light-emitting mechanism. This is demonstrated using improved films of MH yielded by two simple, independent methods, both applicable to several MHs. For example, improved CsPbCl3 and CuBr films exhibit more than 103–104 times stronger excitonic luminescence than conventional films. Inherent excitonic luminescence in MH is promising for applications in exciton-based light-emitting devices, particularly in shorter-wavelength devices than the traditional, nonexcitonic ones because it is MH and only MH that includes many compounds with large band gap and large exciton binding energies. [ABSTRACT FROM AUTHOR]

Presents an analysis of ion-implanted surface and interface structures by computer-simulated backscattering spectra. Effects of isotopes and energy fluctuation on the spectrum simulation; Analysis of an ion-beam-induced damage profiel; Description of the epitaxial recovery of crystallinity.

Photoluminescence from microcrystalline CsPbCl3 films prepared by crystallization from the amorphous phase is measured under N2 laser excitation. Stimulated emission due to free exciton-free exciton inelastic collision occurs not only at 77 K (as reported very recently) but also at room temperature (RT). The intensity of the stimulated emission more rapidly increases with pumping intensity at RT than at 77 K, although the threshold is higher at the former temperature (600 kW cm-2) than at the latter (240 kW cm-2). This demonstration of the stimulated emission at RT from metal halides encourages us to explore laser media in metal halides because of their material abundance. [ABSTRACT FROM AUTHOR]