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In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2/V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors. [ABSTRACT FROM AUTHOR]

Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diameter vias of a Cu back end-of-line process. Corresponding prototypes of cross-point Cu/CuTCNQ nanowire/Al memories exhibited nonvolatile bistable conductive switching for several ten write-erase cycles with switching currents below 10 μA and current densities 1000 times higher than for large-area devices. Scaling of memory elements was also investigated. [ABSTRACT FROM AUTHOR]