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Linear-accelerator-based applications like x-ray free electron lasers, ultrafast electron diffraction, electron beam cooling, and energy recovery linacs use photoemission-based cathodes in photoinjectors for electron sources. Most of these photocathodes are typically grown as polycrystalline materials with disordered surfaces. In order to understand the mechanism of photoemission from such cathodes and completely exploit their photoemissive properties, it is important to develop a photoemission formalism that properly describes the subtleties of these cathodes. The Dowell–Schmerge (D–S) model often used to describe the properties of such cathodes gives the correct trends for photoemission properties like the quantum efficiency (QE) and the mean transverse energy (MTE) for metals; however, it is based on several unphysical assumptions. In the present work, we use Spicer's three-step photoemission formalism to develop a photoemission model that results in the same trends for QE and MTE as the D–S model without the need for any unphysical assumptions and is applicable to defective thin-film semiconductor cathodes along with metal cathodes. As an example, we apply our model to Cs 3 Sb thin films and show that their near-threshold QE and MTE performance is largely explained by the exponentially decaying defect density of states near the valence band maximum. [ABSTRACT FROM AUTHOR]

We report on the novel use of a Cs + ion gun for an ion-beam-assisted molecular-beam-epitaxy (IBA-MBE) method to sequentially deposit Cs-Sb cathodes on room temperature substrates as opposed to the standard technique of thermal evaporation on elevated-temperature substrates. The details of the ultrahigh-vacuum chamber, the Cs + ion source, and the growth technique are elaborated. The final quantum efficiency (QE) is reasonably good for Cs-Sb cathodes grown on two different substrates—Si (100) and strontium titanate—and is comparable to the QE of cathodes grown using thermal sources. This suggests that IBA-MBE could be a viable alternative to grow alkali-antimonides without substrate heating, paving the way for the growth of epitaxial alkali-antimonides in a more reproducible fashion, which may help improve the efficiency of photon detectors and accelerator applications that use alkali-antimonides as electron sources. [ABSTRACT FROM AUTHOR]

Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb(1−x)Px. In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ∼1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb(1−x)Px, with 100% spin polarization being retained at a large range of epitaxial strain. Thus, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb0.5P0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable. [ABSTRACT FROM AUTHOR]

The mean transverse energy (MTE) of electrons emitted from cathodes is a critical parameter that determines the brightness of electron beams for applications, such as x-ray free electron lasers, particle colliders, and ultrafast electron scattering experiments. Achieving a MTE close to the thermal limit is a key step toward realizing the full potential of electron sources in these applications. Cesium antimonide (Cs3Sb) is a technologically important material with a long history of use in photon detection and electron sources. The smallest MTE of electrons photoemitted from Cs3Sb has always been appreciably greater than the thermal limit and was attributed to surface non-uniformities. In this work, we present comprehensive measurements of the photoemission electron energy spectra (PEES), quantum efficiency, and MTE from Cs3Sb in a wide photoexcitation energy range from 1.5 to 2.3 eV. Our PEES measurements demonstrate a notably low photoemission threshold of around 1.5 eV, which is in contrast with the previously perceived threshold of 1.8–2.0 eV. Moreover, we show that the MTE at this threshold of 1.5 eV nearly converges to the thermal limit at 300 K. At 1.8 eV, the MTE measured is 40 meV, which is comparable to the previously reported value. We conclude that this MTE value at 1.8 eV photon energy is not due to surface roughness effects as previously believed, but is a direct consequence of the excess energy. [ABSTRACT FROM AUTHOR]

The authors would like to thank Jonas Dube for identifying the error in our equation in the paper. The authors apologize for any inconveniences the mistake and correction may have caused. A typographical error has been identified in the lower limit of the integral in the denominator of Eq. (22) in the paper.[1] The corrected equation is as follows: HT ht (1) To clarify the limits of integration, we added a sentence following Eq. (22) "The lower limit of integration has been set to ( HT ht ) to account for the fact that electrons with negative kinetic energies cannot be emitted.". [Extracted from the article]

The performance of x-ray free electron lasers and ultrafast electron diffraction experiments is largely dependent on the brightness of electron sources from photoinjectors. The maximum brightness from photoinjectors at a particular accelerating gradient is limited by the mean transverse energy (MTE) of electrons emitted from photocathodes. For high quantum efficiency (QE) cathodes like alkali-antimonide thin films, which are essential to mitigate the effects of non-linear photoemission on MTE, the smallest possible MTE and, hence, the highest possible brightness are limited by the nanoscale surface roughness and chemical inhomogeneity. In this work, we show that high QE Cs3Sb films grown on lattice-matched strontium titanate (STO) substrates have a factor of 4 smoother, chemically uniform surfaces compared to those traditionally grown on disordered Si surfaces. We perform simulations to calculate roughness induced MTE based on measured topographical and surface-potential variations on the Cs3Sb films grown on STO and show that these variations are small enough to have no consequential impact on the MTE and, hence, the brightness. [ABSTRACT FROM AUTHOR]

A controlled porosity dispenser (CPD) photocathode is currently being explored and developed to replace the Cs during operation and increase photocathode lifetime. Experimental results from cesium (Cs) emission of a sintered-wire tungsten CPD are presented and are used to inform a theoretical model of Cs resupply, diffusion, and evaporation on the surface of the photocathode. The evaporation of Cs from a tungsten surface is modeled using an effective one-dimensional potential well representation of the binding energy. The model accounts for both local and global interactions of Cs with the surface metal as well as with other Cs atoms. It is found that for typical activation temperatures within the range of 500 K-750 K, differences of less than 5% between the quantum efficiency (QE) maximum and minimum over ideal homogenous surfaces occur, even when variations to mimic surface non-uniformity due to pore blockage are included. The theoretical evaporation rates of sub-monolayer surface coverage of Cs compare well to the data of Taylor and Langmuir [I. Langmuir and J. B. Taylor, Phys. Rev. 40, 463-464 (1932)] and reproduce the nonlinear behavior of evaporation with varying coverage and temperature. [ABSTRACT FROM AUTHOR]

A 300 keV transmission electron microscope was modified to produce broadband pulsed beams that can be, in principle, between 40 MHz and 12 GHz, corresponding to temporal resolution in the nanosecond to picosecond range without an excitation laser. The key enabling technology is a pair of phase-matched modulating and de-modulating traveling wave metallic comb striplines (pulsers). An initial temporal resolution of 30 ps was achieved with a strobe frequency of 6.0 GHz. The placement of the pulsers, mounted immediately below the gun, allows for preservation of all optical configurations, otherwise available to the unmodified instrument, and therefore makes such a post-modified instrument for dual-use, i.e., both pulsed-beam mode (i.e., stroboscopic time-resolved) and conventional continuous waveform mode. In this article, we describe the elements inserted into the beam path, challenges encountered during integration with an in-service microscope, and early results from an electric-field-driven pump–probe experiment. We conclude with ideas for making this class of instruments broadly applicable for examining cyclical and repeatable phenomena. [ABSTRACT FROM AUTHOR]

An oft used approximation to predict quantum efficiency (QE) from bare metals or those with a low work function coating such as cesium is to assume that photo-excited electrons have not scattered prior to their emission. Monte Carlo simulations are used to assess that approximation, and show that, while good for bare metals, for cesiated metals a photoexcited electron may undergo several scattering events and yet be emitted. Neglecting scattered electrons therefore underestimates QE. Emitted electrons that have undergone scattering before emission elongate the response time by giving rise to a long time tail, low energy contribution to the faster non-scattered emission, for which a model is developed. The theory is applied to study variations in QE as a function of wavelength measured from cesiated metal surfaces. The extension of the findings to semiconductor photocathodes is briefly discussed. [ABSTRACT FROM AUTHOR]

A model of photoemission from cesium antimonide (Cs3Sb) that does not rely on adjustable parameters is proposed and compared to the experimental data of Spicer [Phys. Rev. 112, 114 (1958)] and Taft and Philipp [Phys. Rev. 115, 1583 (1959)]. It relies on the following components for the evaluation of all relevant parameters: (i) a multidimensional evaluation of the escape probability from a step-function surface barrier, (ii) scattering rates determined using a recently developed alpha-semiconductor model, and (iii) evaluation of the complex refractive index using a harmonic oscillator model for the evaluation of reflectivity and extinction coefficient. [ABSTRACT FROM AUTHOR]

Usable lifetime has long been a limitation of high efficiency photocathodes in high average current accelerator applications such as free electron lasers, where poor vacuum conditions and high incident laser power contribute to early degradation in electron beam emission. Recent progress has been made in adapting well known thermionic dispenser techniques to photocathodes, resulting in a dispenser photocathode whose photosensitive surface coating of cesium can be periodically replenished to extend effective lifetime. This article details the design and fabrication process of a prototype cesium dispenser photocathode and describes in detail the dominant factors affecting its performance: activation procedure, surface cleanliness, temperature, and substrate microstructure. [ABSTRACT FROM AUTHOR]

Electron emission nonuniformity is a cause of intrinsic emittance from the electron source, and is a consequence of work function variation due to crystal faces and coatings such as cesium, field enhancement effects due to surface structure, and temperature. Its investigation using particle-in-cell (PIC) codes such as MICHELLE is hampered due to the lack of an emission model that can treat thermal, field, and photoemission effects particularly in crossover regions where the canonical equations, e.g., the Fowler-Nordheim, Richardson-Laue-Dushman, and Fowler-Dubridge equations are compromised. A recently developed thermal-photo-field emission equation is used here to simulate the consequences of nonuniformity due to work function variation induced by coating variation. The analysis is performed both theoretically using simple models as well as using particle-in-cell codes (MICHELLE) to assess changes in current density and emittance. PIC simulations considering an idealized model of geometric effects and crystal face variation indicate that a flat, grainy surface causes the emittance to increase by a factor of 5 while the addition of hemispherical bumps causes the emittance to increase by an additional factor of 6 even though the current is but 10% larger. [ABSTRACT FROM AUTHOR]

To meet future demands of free electron lasers, reliable and long lasting photocathodes are needed. With current photocathodes lacking a sufficient combination of both lifetime and high quantum efficiency, research continues to explore ways to formulate improved photocathodes. In this work, we investigate the photoemissive and thermal stability properties of CsAu on a porous tungsten substrate. Quantum efficiency (QE) and robustness characterization of evaporatively deposited metal cathodes, such as gold, opens possibilities for future long-lived high QE dispenser photocathodes on both conductive and insulating diffusion barriers. [ABSTRACT FROM AUTHOR]