1. Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics.
- Author
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Esin, A. A., Alikin, D. O., Turygin, A. P., Abramov, A. S., Hreščak, J., Walker, J., Rojac, T., Bencan, A., Malic, B., Kholkin, A. L., and Shur, V. Ya.
- Subjects
FERROELECTRIC materials ,DIELECTRIC materials ,CERAMICS ,ELECTRIC field effects ,ELECTROSTATICS - Abstract
The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such "extrinsic" contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-10
6 Hz) dielectric permittivity in K1-x Nax NbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials. [ABSTRACT FROM AUTHOR]- Published
- 2017
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