1. ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power.
- Author
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Bjarnason, J.E., Chan, T.L.J., Lee, A.W.M., Brown, E.R., Driscoll, D.C., Hanson, M., Gossard, A.C., and Muller, R.E.
- Subjects
GALLIUM arsenide ,SILICON nitride ,GAUSSIAN beams ,LIGHT sources ,PHYSICS - Abstract
This letter reports the fabrication and demonstration of an ErAs:GaAs interdigitated photomixer as a tunable THz source ranging from ∼20 GHz to ∼2 THz, with 12 μW maximum power typically around ∼90 GHz. Each photomixer is coupled to a composite dipole-spiral planar antenna that emits a Gaussian-type beam into free space. The beam switches from dipole to spiral antenna behavior as the frequency increases. A distributed Bragg reflector is embedded in the device beneath the photomixer to increase its external quantum efficiency. The photomixer has a 900 Å thick silicon nitride coating which serves as an antireflection and passivation layer, and also improves the reliability and heat tolerance of the device. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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