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Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology. It is required to study in detail the charge transport mechanism in a Si3N4-based memristor to further improve the cell element and to create a matrix of these elements. Despite many research activities carried out, the charge transport mechanism in Si3N4-based memristors is still unclear. Metal–nitride–oxide–silicon structures that exhibit memristor properties were obtained using low-pressure chemical vapor deposition at 700 °C. The fabricated metal–nitride–oxide–silicon memristor structure does not require a forming procedure. In addition, the metal–nitride–oxide–silicon memristor has a memory window of about five orders of magnitude. We found that the main charge transport mechanism in the metal–nitride–oxide–silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps. Trap parameters were determined in the Si3N4-based memristor in the high resistive state. [ABSTRACT FROM AUTHOR]

Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature. [ABSTRACT FROM AUTHOR]

Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature. [ABSTRACT FROM AUTHOR]

Lanthanum oxide (La2O3) films were grown by the reactive dc magnetron sputtering and studied their structural, chemical and optical parameters. La2O3 films were deposited onto Si substrates by sputtering La-metal in a reactive gas (Ar+O2) mixture at a substrate temperature of 200 °C. Reflection high-energy electron diffraction measurements confirm the amorphous state of La2O3 films. Chemical analysis of the top-surface layers evaluated with x-ray photoelectron spectroscopy indicates the presence of a layer modified by hydroxylation due to interaction with atmosphere. Optical parameters of a-La2O3 were determined with spectroscopic ellipsometry (SE). There is no optical absorption over spectral range λ=250-1100 nm. Dispersion of refractive index of a-La2O3 was defined by fitting of SE parameters over λ=250-1100 nm. [ABSTRACT FROM AUTHOR]

Yttrium oxide (Y2O3) films with an average crystallite-size (L) ranging from 5 to 40 nm were grown by sputter-deposition onto Si(100) substrates. The optical properties of grown Y2O3 films were evaluated using spectroscopic ellipsometry measurements. The size-effects were significant on the optical constants and their dispersion profiles of Y2O3 films. A significant enhancement in the index of refraction (n) is observed in well-defined Y2O3 nanocrystalline films compared to that of amorphous Y2O3. A direct, linear L-n relationship found for Y2O3 films suggests that tuning optical properties for desired applications can be achieved by controlling the size at the nanoscale dimensions. [ABSTRACT FROM AUTHOR]

The optical properties, interface structure, and thermal stability of the ZrO2 films grown on Si(100) were investigated in detail. A 2 nm thick interfacial layer (IL) is formed at the ZrO2–Si interface for the as-grown ZrO2. The optical constants of ZrO2 films and IL correspond to amorphous-ZrO2 and amorphous-SiO2, respectively. The oxidation and IL growth at 900 °C, as a function of annealing time, exhibit a two-step behavior with a slow and a fast growth-rate zones. The transition from a zone of slow to fast rate is attributed to structurally modified ZrO2 facilitating the faster oxygen transport to the ZrO2/Si interface. [ABSTRACT FROM AUTHOR]