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During picosecond photogeneration of electron-hole plasma (EHP) in GaAs, intensive picosecond emission arises. Self-modulations of emission characteristics and of light fundamental absorption are found out. Quantitative estimations are made, confirming that the self-modulations are caused by sub terahertz self-oscillations of electron population depletion in conduction band. Expression for the frequency of self-oscillations of population depletion is obtained. The received results, seemingly, reveal the occurrence of a new type of waves in GaAs, i.e., sub terahertz autowaves of carrier population depletion in energy space, a new type of collective excitation of carriers and a new form of EHP instability. [ABSTRACT FROM AUTHOR]