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Transport properties of C_<60> field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C_<60>channel, and barriers to carrier hopping between trap states in the channel of C_<60>., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/4409

Transport characteristics in n-channel organic field-effect transistors are discussed on the basis of density of states (DOS) for trap states determined with multiple trap and release model. First the trap-free intrinsic mobilities, the activation energies, and total effective DOS for conduction band are determined with the effective field-effect mobility versus temperature plots and total DOS of trap states. Second the general formula for subthreshold swing S applicable to organic field-effect transistors is derived and the surface potentials are determined from the S determined from the transfer curves and the DOS for the trap states according to the general formula., identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/4408