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The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes. [ABSTRACT FROM AUTHOR]

This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs. [ABSTRACT FROM AUTHOR]

We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high-k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy. [ABSTRACT FROM AUTHOR]

The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (WO3) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide (Ag2O) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag2O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITO/Ag/WO3 with a LiF/Al bilayer was superior to those devices which only used ITO or WO3, mainly because the out coupling was enhanced by employing a WO3 material, which is much more transparent than ITO. [ABSTRACT FROM AUTHOR]

A semitransparent cathode of indium tin oxide (ITO)/Ag/ITO was developed as a resonant tunneling double barrier structure for transparent organic light-emitting diodes. A weak negative differential resistance was observed in devices using a 100 nm thick ITO/Ag/ITO layer as a cathode in combination with a thin LiF/Al layer. The current injection of devices was dominated by resonant tunneling, which induced no luminance at low voltage. This was achieved by employing an e-beam evaporated ITO/Ag/ITO cathode due to the double quantum barriers of ITO and the quantum well of Ag. The authors also applied the multilayer cathode to small molecule devices, which showed the same resonant tunneling currents. [ABSTRACT FROM AUTHOR]

Pentacene organic thin film transistors (OTFTs) with low-k and high-k hybrid gate dielectrics by CF4 plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm2/V s), a low threshold voltage of +1 V, and on/off current ratios of 105 at -5 V gate bias. After CF4 plasma treatment, fluorine atoms diffuse into the interior low-k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs. [ABSTRACT FROM AUTHOR]

The authors fabricated a no-bias pi cell using a dual alignment layer with an intermediate pretilt angle via a rubbing. In the dual alignment layer system, the competition between crest region favoring the vertical alignment and trough region favoring planar alignment made it possible to achieve various pretilt angles, and adjusted pretilt angle from 90° to 20° with rubbing. In addition, as the intermediate pretilt angle plays a role in eliminating the activation energy and thus allowing formation of the initial bend state in pi cell fabrication, this approach achieved a no-bias pi cell for a liquid crystal display with both low power consumption and fast response. [ABSTRACT FROM AUTHOR]

We have fabricated highly stable organic electroluminescent devices based on spin-coated soluble phenyl-substituted poly-p-phenylene-vinylene (Ph-PPVs) thin films. The electrical properties of aluminum cathode, prepared by ion-beam-assisted deposition, on Ph-PPV have been investigated and compared to those prepared by thermal evaporation. Although energetic particles of Al assisted by Ar+ ion may damage the organic material, I–V–L characteristics are improved by evaporating a thin Al buffer layer prior to ion-beam-assisted deposition. In addition, a dense Al cathode inhibits the permeation of H2O and O2 into Ph-PPV film by suppressing pinhole defects, and thus retards dark spot growth. This may be deduced from highly packed structure of Al cathode with smaller contact resistance between Al and Ph-PPV. The lifetime of an organic light-emitting device has been extended by dense Al film through an ion-beam-assisted deposition process. [ABSTRACT FROM AUTHOR]