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Losses of neutral beam (NB) injected fast ions from the confinement region of a field-reversed configuration (FRC) with a strong magnetic mirror are numerically analyzed for parameters relevant to NB injection experiments on the FIX (FRC injection experiment) device [T. Asai et al., Phys. Plasmas 7, 2294 (2000)]. Ionization processes of beam particles are calculated by the Monte Carlo method. The confinement of beam ions is discussed with the concept of accessible regions that restrict the ion excursion and are determined from two constants of motion, the kinetic energy and canonical angular momentum, in the case of an axisymmetric and a steady state FRC without an electrostatic field. From the calculation of the accessible regions, it is found that all the fast ions suffer from the orbit loss on the wall surface and/or the end loss. Single particle orbits are also calculated to find a difference of confinement properties from the results by employing the accessible regions. The magnetic moment is observed to show nonadiabatic motions of the beam ions, which cause a gradual orbit loss on the wall even in a case that a strong magnetic mirror is applied. The results show that the correlation of the magnetic moment disappears as the fast ions experience the density gradient around the separatrix surface and the field-null points. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Atom-probe technique was applied to analyze three-dimensional dopant distribution in Si substrate of metal-oxide-semiconductor field effect transistor (MOSFET) structure. As a result, three-dimensional As atom distribution implanted in Si was obtained. The quantification of the As atom distribution in a depth direction was confirmed as compared with the one-dimensional distribution measured by secondary ion mass spectroscopy. Moreover, monolayer segregation of As atoms at the interface between gate oxide and Si substrate was clearly observed. This result shows the possibility to clarify discrete dopant distribution in Si substrate related to the characteristic variation of MOSFETs. [ABSTRACT FROM AUTHOR]

Interlaboratory comparison of positron annihilation lifetime measurements using synthetic fused silica and polycarbonate was conducted with the participation of 12 laboratories. By regulating procedures for the measurement and data analysis the uncertainties of the positron lifetimes obtained at different laboratories were significantly reduced in comparison with those reported in the past. [ABSTRACT FROM AUTHOR]

Three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at Σ3{111} grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at. %. The location of a boundary was determined by APT even when the boundary was not contaminated. Unlike the boundaries in multicrystalline silicon grown by the casting method, the impurities did not segregate at the boundaries even when the impurity concentrations were high. The gettering ability of the boundaries was discussed. [ABSTRACT FROM AUTHOR]