Search

The occurrence of acoustic cavitation in the cleaning liquid is a crucial precondition for the performance of megasonic cleaning systems. Hence, a fundamental understanding of the impact of different parameters of the megasonic process on cavitation activity is necessary. A setup capable of synchronously measuring sonoluminescence and acoustic emission originating from acoustically active bubbles is presented. The system also includes a high-speed-stroboscopic Schlieren imaging system to directly visualize the influence of cavitation activity on the Schlieren contrast and resolvable bubbles. This allows a thorough characterization of the mutual interaction of cavitation bubbles with the sound field and with each other. Results obtained during continuous sonication of argon-saturated water at various nominal power densities indicate that acoustic cavitation occurs in a cyclic manner, during which periods of stable and inertial cavitation activity alternate. The occurrence of higher and ultraharmonics in the acoustic emission spectra is characteristic for the stable cavitation state. The inertial cavitation state is characterized by a strong attenuation of the sound field, the explosive growth of bubbles and the occurrence of broadband components in the acoustic spectra. Both states can only be sustained at sufficiently high intensities of the sound field. At lower intensities, their occurrences are limited to short, random bursts. Cleaning activity can be linked to the cavitation activity through the measurement of particle removal on standard 200 mm silicon wafers. It is found that the particle removal efficiency is reduced, when a continuous state of cavitation activity ceases to exist.

In this paper the magnetic field detection limits of microscopic Hall sensors are investigated as a function of their lateral size. Hall sensors fabricated from GaAs/AlGaAs heterostructures and silicon are experimentally investigated at different temperatures using Hall effect and noise spectrum measurements. At room temperature a clear size dependence of the detection limit is observed, whereas at low temperatures this dependence is found to disappear. The results are explained using the theory of noise in semiconductors.

We describe a high sensitivity measurement setup for the determination of recombination parameters in semiconductors at low levels of carrier injection. The setup is based on a lock-in amplifier and on a commercially available contactless conductivity detector. The information on recombination is extracted through the analysis, assuming quasi-steady-state conditions, of the low frequency, sinusoidally modulated photoconductivity signal induced by the illumination of a 950 nm light emitting diode array. Experimental results show a substantial increase in sensitivity with respect to traditional transient or quasi-steady-state techniques based on the same detection principle. The sensitivity bonus can be exploited for the extension of the carrier injection range for which effective recombination lifetime is measurable, both in the case of p-type and n-type wafers.