Search

There is a growing interest in mixing spintronics and superconductivity to develop original energy-efficient nonvolatile memory and logic devices. Research works conducted so far have mostly focused on superconductor with critical temperature Tc lower than 10 K. Here, we report on the growth and characterization of MgB2/Ni80Fe20 and MgB2/Co bilayers, where Tc of the MgB2 layer is of the order of 30 K. Ferromagnetic resonance was undertaken to analyze the spin pumping into MgB2. The larger magnetization at saturation in Co, as compared to Ni80Fe20, induces a smaller spin pumping contribution to the damping when MgB2 is normal. A spin pumping reduction was observed for both bilayers when MgB2 becomes superconductor and is attributed to the opening of the superconducting gap. The present results show that MgB2 thin films could be suitable to implement superconducting spintronic at 30 K, which is not only relevant for future technological development but also relaxes experimental constraints related to low-temperature investigations. [ABSTRACT FROM AUTHOR]

Heusler magnetic alloys offer a wide variety of electronic properties very promising for spintronics and magnonics. Some alloys exhibit a spin gap in their band structure at the Fermi energy, the so-called half-metal magnetic (HMM) behavior. This particular property leads to two very interesting properties for spintronics, i.e., fully polarized current together with ultra-low magnetic damping, two key points for spin-transfer-torque based devices. This Tutorial gives experimental details to grow and characterize Heusler Co2MnZ compounds in thin films (Z = Al, Si, Ga, Ge, Sn, Sb) by using molecular beam epitaxy in order to get the proper predicted electronic properties. A first part of this Tutorial is dedicated to control the stoichiometry as best as possible with some methods to test it. The chemical ordering within the lattice was examined by using electron diffraction during growth, regular x-ray diffraction, and scanning transmission electron microscopy. In particular, standard x-ray diffraction is carefully analyzed depending on the chemical ordering in the cubic cell and shown to be inefficient to distinguish several possible phases, on the contrary to electron microscopy. The electronic properties, i.e., magnetic moment, spin polarization, and magnetic damping were reviewed and discussed according to the stoichiometry of the films and also theoretical predictions. Polycrystalline films were also analyzed, and we show that the peculiar HMM properties are not destroyed, a good news for applications. A clear correlation between the spin polarization and the magnetic damping is experimentally demonstrated. At least, our study highlights the major role of stoichiometry on the expected properties. [ABSTRACT FROM AUTHOR]

Aspects on the phase stability and mechanical properties of nitrogen deficient (Ti0.54Al0.46)Ny alloys were investigated. Solid solution alloys of (Ti,Al)N were grown by cathodic arc deposition. The kinetic energy of the impinging ions was altered by varying the substrate bias voltage from –30V to –80 V. Films deposited with a high bias value of –80V showed larger lattice parameter, finer columnar structure, and higher compressive residual stress resulting in higher hardness than films biased at –30V when comparing their as-deposited states. At elevated temperatures, the presence of nitrogen vacancies and point defects (anti-sites and self-interstitials generated by the ion bombardment during coating deposition) in (Ti0.54Al0.46)N0.87 influence the driving force for phase separation. Highly biased nitrogen deficient films have point defects with higher stability during annealing, which cause a delay of the release of the stored lattice strain energy and then accelerates the decomposition tendencies to thermodynamically stable c-TiN and w-AlN. Low biased nitrogen deficient films have retarded phase transformation to w-AlN, which results in the prolongment of age hardening effect up to 1100 °C, i.e., the highest reported temperature for Ti-Al-N material system. Our study points out the role of vacancies and point defects in engineering thin films with enhanced thermal stability and mechanical properties for high temperature hard coating applications. [ABSTRACT FROM AUTHOR]

Strain modulation during a two-way shape memory effect (TWSME) in a sputtered nitinol NiTi is used to reliably induce and switch by 90° a uniaxial magnetic anisotropy of a 20 nm thick Ni film during the thermal cycle from 300 K to 400 K. NiTi strain and its distribution are carefully measured by digital image correlation during tensile prestrain and subsequent temperature cycles in order to compare with Ni strain extracted from the magnetometry measurement and from transmission electron microscopy. In a NiTi/Ni bilayer, a variation of 2.7% strain in NiTi during the TWSME generates 1.3% strain in Ni, which results in a transition from −2 × 104 J/m3 in-plane magnetic anisotropy to +1 × 105 J/m3. Such a composite system offers a way to timely ease writability while maintaining high thermal stability at rest in magnetic media. [ABSTRACT FROM AUTHOR]

Spin-polarization and magnetic damping are measured for several polycrystalline films with each of them being made of a different single Co2Mn-based Heusler compound. As several epitaxial Co2Mn-based Heusler compounds are shown to be half-metal magnetic materials with full spin-polarization and ultralow magnetic damping, we explore here these properties but in polycrystalline films. Co2MnSi, Co2MnGe, and Co2MnGa thin films were grown on glass substrates and analyzed in situ by electron diffraction and spin-resolved photoemission and ex situ by transmission electron microscopy and ferromagnetic resonance. Despite the polycrystalline state of the films, they still exhibit high spin polarizations and very low magnetic damping coefficients. The latter are at least of the same order as the best epitaxial films using regular ferromagnetic materials. The key point to achieve such properties is to control the Heusler stoichiometry as best as possible. [ABSTRACT FROM AUTHOR]

Nitrogen-doped Cu2O thin films have been deposited at room temperature by reactive magnetron sputtering. It is demonstrated that nitrogen doping in Cu2O can significantly improve the electrical properties by increasing the carrier concentration. The nitrogen chemical state in doped thin films has been investigated by electron energy loss spectroscopy, which reveals that nitrogen is in the form of molecular N2 in Cu2O thin films rather than the N-anion. Such experimental results are well consistent with the recently reported calculation, suggesting that in N-doped Cu2O, nitrogen mainly substitutes Cu in the molecular form, (N2)Cu, rather than in the atomic form at the oxygen site (Nq). [ABSTRACT FROM AUTHOR]